WorldCat Identities

Nicolet, Marc-A

Overview
Works: 53 works in 101 publications in 3 languages and 1,063 library holdings
Genres: Conference papers and proceedings 
Roles: Author, Thesis advisor, Editor, Other
Classifications: QC793.5.A227, 539.7522
Publication Timeline
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Most widely held works by Marc-A Nicolet
Backscattering spectrometry by Wei-Kan Chu( Book )

15 editions published between 1978 and 1990 in English and held by 406 WorldCat member libraries worldwide

Backscattering Spectrometry reviews developments in backscattering spectrometry and covers topics ranging from instrumentation and experimental techniques to beam parameters and energy loss measurements. Backscattering spectrometry of thin films is also considered, and examples of backscattering analysis are given. This book is comprised of 10 chapters and begins with an introduction to backscattering spectrometry, what it can and what it cannot accomplish, and some """"rules of thumb"""" for interpreting or reading spectra. The relative strengths and weaknesses of backscattering spectrome
The earth as a planet by Gerard P Kuiper( Book )

1 edition published in 1954 in English and held by 257 WorldCat member libraries worldwide

This volume of the Solar system series is intended to cover those aspects of geophysics, geochemistry, and atmospheric physics as pertain to the earth as a whole and which are able to assist and guide the studies of other planets
Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A.( Book )

9 editions published in 1986 in English and held by 179 WorldCat member libraries worldwide

Ion mixing and surface layer alloying : recent advances by Workshop on Ion Mixing and Surface Layer Alloying( Book )

5 editions published in 1984 in English and held by 134 WorldCat member libraries worldwide

Über die Gültigkeitsgrenzen und die modellmässige Begründung des Ersatzschemas von Flächentransistoren by Marc-A Nicolet( Book )

7 editions published in 1959 in German and Undetermined and held by 14 WorldCat member libraries worldwide

Backscattering of 1 MeV He on SiC by Marc-A Nicolet( Book )

3 editions published in 1970 in English and German and held by 7 WorldCat member libraries worldwide

Experimentelle und theoretische Untersuchungen über das Verhalten von Flächentransistoren by Marc-A Nicolet( Book )

3 editions published in 1959 in German and held by 5 WorldCat member libraries worldwide

Investigations of CuInSe₂ thin films and contacts : annual subcontract report, September 1988-October 1989 by Marc-A Nicolet( Book )

1 edition published in 1990 in English and held by 4 WorldCat member libraries worldwide

Untersuchungen über die Gefahren der Amalgame für den Amalgamträger by Marc-A Nicolet( Book )

2 editions published between 1929 and 1931 in German and held by 3 WorldCat member libraries worldwide

Investigations of CuInSe₂ thin films and contacts : annual subcontract report, 1 January 1990-28 February 1991 by Marc-A Nicolet( Book )

1 edition published in 1991 in English and held by 3 WorldCat member libraries worldwide

Analysis of Semiconductor Structures by Nuclear and Electrical Techniques by Marc-A Nicolet( Book )

4 editions published between 1975 and 1978 in English and held by 3 WorldCat member libraries worldwide

This report presents three studies of thin film reactions between metal films and Si. In these studies MeV He ion backscattering spectrometry, Auger electron spectroscopy, secondary electron microscopy and glancing angle x-ray diffraction are used as the principal tools of analysis. (1) At temperatures well below the Si-Al eutectic (577C), fine grained polycrystalline Si in contact with Al films recrystallizes in the Al matrix. The recrystallization can be deferred or suppressed by placing a buffer layer of V or Ti between the Al film and poly Si. (2) When annealing Pt films deposited on Si in an O2 ambient the formation of PtSi does not consume all the Pt. The top layer of Pt is separated from the underlying PtSi by a thin SiO2 layer. (3) The formation of Ni silicide depends on the structural characteristics of the Si substrate. The growth of the silicide (Ni2Si) initially formed is faster on <100> and poly Si than on <111> Si. For Ni on amorphous Si, NiSi also appears
Materials characterization( Book )

1 edition published in 1986 in English and held by 2 WorldCat member libraries worldwide

Analysis of Semiconductor Structures by Nuclear and Electrical Techniques: Silicide Formation( Book )

2 editions published between 1974 and 1975 in English and held by 2 WorldCat member libraries worldwide

The reactions between metal layers and Si or SiO2 substrates are major considerations in choice of metallization systems for integrated circuits. Since these reactions can occur at temperatures as low as 100C, it is necessary to make the proper choice of metal layers to obtain satisfactory metal/Si contacts compatible with processing technology. In the past year (May 73 to May 74) the work at Caltech has concentrated on evaluation of silicide formation. Primary emphasis was placed on Pd, Ni and V. For some metals (Nb, V, Ti) the metal layers were deposited on SiO2 as well as Si. In this work metal layers 1000 to 4000A thick are deposited and silicide growth kinetics determined by MeV He backscattering spectrometry and phase identification by glancing angle x-ray diffraction. (Modified author abstract)
Proceedings of the NATO Advanced Study Institute on Atmospheric Ozone : its variation and human influences : Aldeia das Acoteias, Algarve, Portugal, October 1-13, 1979 by NATO Advanced Study Institute on Atmospheric Ozone: Its Variation and Human Influences( Book )

1 edition published in 1980 in English and held by 2 WorldCat member libraries worldwide

This volume contains the proceedings of a North Atlantic Treaty Organization Advanced Study Institute on Atmospheric Ozone and its Human Influences. The conference was held at Aldeia das Acoteias, Portugal in October 1979. Included are papers for speakers who were invited to review the current state of knowledge for different aspects of the ozone problem. Selected short contributions of new results by other conference attendees are also given. Topics covered include solar flux and its changes, ozone observations and the theories of spatial and temporal distribution of ozone. Natural and man made trace gases which may influence atmospheric ozone are also discussed
Materials characterization : Symposium : Papers( Book )

2 editions published in 1986 in English and held by 2 WorldCat member libraries worldwide

Basic Studies of Ion Mixing( Book )

2 editions published between 1984 and 1988 in English and held by 2 WorldCat member libraries worldwide

The objective was to elucidate mechanisms of atomic mixing induced by ions with masses greater than 25 amu and energies between 50 and 500 keV. Specifically, the intent was to identify systematic trends that would reveal the nature of the main parameters that affect atomic rearrangements generated by ion irradiation. In addition, the relationship that might exist between the mechanisms of ion mixing and of thermal processing was to be explored. Metallic systems were to be emphasized. The approach was to choose samples and parameters of irradiation in such a way that the complexity of the results was minimized. The idea was that limiting cases would thereby be established for which one mechanism is dominant. Consequently, experiments at low temperatures have been pursued to investigate processes that are independent of temperature. Irradiations at elevated temperatures were employed to investigate the correlation between ion mixing and thermal processing. (jhd)
X-Ray and Backscattering Analysis of Ion Implantation Phenomena in GaAs and Related Compounds( Book )

2 editions published between 1983 and 1984 in English and held by 2 WorldCat member libraries worldwide

It is well-known that amorphous GaAs layers produced by ion implantation behave differently upon thermal annealing from amorphized layers of Si or Ge. The special features of GaAs include non-linear regrowth with time, poor epitaxy at low temperatures, and the necessity of high annealing temperatures for electrical activation. Whilst many models have been proposed, the reasons for these differences are unclear. Double crystal x-ray diffractrometry, interpreted with a model of kinematic diffraction is a new tool which can give accurate information about strain and damage in imperfect crystalline films. It may therefore yeild information about structural characteristics that may explain these differences. The present is for a study of implantation and annealing in GaAs and other materials by this technique, as well as by backscattering spectrometry (BSS)
Ueber die Gültigkeitsgrenzen und die modellmässige Begründung des Ersatzschemas von Flächentransistoren by Marc-A Nicolet( Book )

2 editions published between 1958 and 1959 in German and held by 2 WorldCat member libraries worldwide

Development of stable metallization systems by Marc-A Nicolet( Book )

2 editions published in 1992 in English and held by 2 WorldCat member libraries worldwide

Shallow Si n+p junctions equipped with a reactively sputtered Ta36Si14N50 amorphous metallic diffusion barrier of about 100 nm thickness have survived, without a detectable degradation of their reverse current, a 30 min long vacuum annealing test of 700 deg C with Al (Al melts at 660 deg C), 750 deg C with Au, and 950 deg C with Cu. For all three metallizations, these temperatures are records that much surpass any previously known results. This same Ta-Si-N film also acts as an excellent conducting annealing cap for GaAs. Implications of these findings are briefly discussed. A list of collaborators and of papers acknowledging the support of this contract are given
Bei san she fen xi ji shu by Weigan Zhu( Book )

1 edition published in 1986 in Chinese and held by 2 WorldCat member libraries worldwide

 
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Alternative Names
Nicolet, M.-A.

Nicolet, M.-A. (Marc-A.)

Languages
English (50)

German (14)

Chinese (1)