WorldCat Identities

Stillman, G. E.

Works: 50 works in 85 publications in 1 language and 800 library holdings
Roles: Author, Editor, Other
Publication Timeline
Most widely held works by G. E Stillman
Properties of gallium arsenide by M. R Brozel( )

13 editions published in 1996 in English and held by 412 WorldCat member libraries worldwide

Physical properties of semiconductors by Charles M Wolfe( Book )

10 editions published in 1989 in English and held by 323 WorldCat member libraries worldwide

Gallium arsenide and related compounds : contrib. papers ... held at Albuquerque, New Mexico, USA, 19-22 Sept. 1982 by International Symposium on Gallium Arsenide and Related Compounds( Book )

2 editions published in 1983 in English and held by 6 WorldCat member libraries worldwide

Junction effects in compound semiconductors( Book )

4 editions published between 1965 and 1967 in English and held by 4 WorldCat member libraries worldwide

Some results of Zn-diffusion in Ga(As(1-x)P(X)) and their effects on laser junctions are summarized. Pulsed operation of Ga(As(1-x)P(X)) lasers to temperatures beyond 200K is described. Self-oscillation phenomena (instabilities) in bulk n-type Si counter-doped with Au or Co are discussed briefly. These oscillations occur at typically 1 Mc or lower frequencies in Co-compensated Si and to well above 100 Mc in Au-compensated Si. (Author)
Impurity and Defect Interactions in GaAs( Book )

3 editions published between 1981 and 1984 in English and held by 3 WorldCat member libraries worldwide

This work was initiated to examine interactions among impurities and defects in GaAs which produce problems in the fabrication of high-speed integrated circuits. For this purpose various aspects of impurity and defect identification, interaction, redistribution, incorporation, and carrier scattering were investigated. (Author)
III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon( Book )

3 editions published between 1989 and 1992 in English and held by 3 WorldCat member libraries worldwide

The research goal is to further develop quantum well heterostructure (QWH) lasers and to realize reliable Al(x)Ga(1-x)As-GaAs QWH lasers on Si. In spite of the significant lattice and thermal expansion mismatch between GaAs and Si, the idea of splicing III-V semiconductor technology, i.e., optoelectronics and photonics, onto Si has obvious appeal. Adding to this is the fact, as shown earlier in this work, that cw 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that the Si substrate serves as a better heat sink than GaAs. This makes possible the right-side-up heat sinking needed for electronic-photonic integrated circuits. This report contains research results on quantum well heterostructures on Si, impurity-induced layer disordering, phonon-assisted laser operations and other laser studies. (jhd)
The Study and Identification of Residual Donor Species in High Purity Semiconductors( Book )

2 editions published between 1979 and 1980 in English and held by 2 WorldCat member libraries worldwide

A Fourier transform spectroscopy apparatus has been constructued. This apparatus uses photothermal ionization to probe the energy level structure of shallow impurities in semiconductors. The present form of the apparatus, and progress made in modifying it to increase its resolution are described in detail. An account of our immediate and possible future applications of the apparatus is given. (Author)
The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices( Book )

2 editions published between 1985 and 1989 in English and held by 2 WorldCat member libraries worldwide

This report describes the results and the progress we have made in the study of: (a) Impurity-induced layer disordering (IILD) of thin layer III-V heterostructures and its application to quantum well heterostructure lasers, (2) the fundamental behavior of quantum well heterostructures and the application of IILD to laser devices, and (3) the continuous (cw) room temperature (300 K) laser operation of A1xGa1-xAs-GaAs quantum well heterostructures grown on Silicon. Aluminum gallium arsenide, Gallium arsenides. (mjm)
Amphoteric Impurities in Gallium Arsenide( Book )

2 editions published between 1986 and 1987 in English and held by 2 WorldCat member libraries worldwide

Low temperature photoluminescence spectroscopy has been applied to the study of high purity GaAs grown by liquid phase epitaxial, hydride vapor phase epitaxial, metalorganic chemical vapor deposition and molecular beam epitaxial growth techniques. This analytical technique has been used in combination with the analysis of variable temperature Hall effect data to quantitatively analyze the acceptor species present in high purity epitaxial GaAs. The incorporation of the amphoteric column IV elements has been studied for different growth conditions in each of the epitaxial growth techniques
Novel engineered compound semiconductor heterostructures for advanced electronics applications by G. E Stillman( Book )

2 editions published in 1992 in English and held by 2 WorldCat member libraries worldwide

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-layered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of Al(x)Ga(l-x)As-GaAs quantum- well heterostructures and the native oxide stabilization of Al(x)Ga(1-x)As-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report
Integrated Optical Circuits( Book )

2 editions published in 1973 in English and held by 2 WorldCat member libraries worldwide

In(x)Ga(1-x)As avalanche photodiodes have been integrated into GaAs waveguide structures by selective epitaxial deposition. Measurements of the ionization coefficients of electrons (alpha) and holes (beta) have been made for GaAs by using a special type of GaAs Schottky barrier avalanche photodiode structure. A new type of GaAs avalanche photodiode which has considerable advantages for detection at wavelengths up to 0.93 micrometer has been investigated. Significant progress has been made in the vapor epitaxial growth of Hg(1-x)Cd(x)Te on CdTe substrates by H2 transport. High-energy proton bombardment has been used to fabricate waveguides for 10.6 micrometer in CdTe. Coupling of 10.6 micrometer radiation into CdTe waveguides has been explored. The feasibility of integrated surface acoustic wave modulators for 10.6 micrometer has been investigated. (Modified author abstract)
InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications( Book )

2 editions published between 1979 and 1980 in English and held by 2 WorldCat member libraries worldwide

In this project we have been concerned with the liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied
Be-Implanted 1.3-Micrometers InGaAsP Avalanche Photodetectors( Book )

1 edition published in 1978 in English and held by 1 WorldCat member library worldwide

Hot Electron Effects of Importance for Micron and Submicron Devices( Book )

1 edition published in 1981 in English and held by 1 WorldCat member library worldwide

During the period of this contract fifteen papers have been published. The manuscripts concern lateral transport in superlattices, transport at extremely high electric fields and impact ionization and quantum well heterojunction lasers. (Author)
Al0.5Ga0.5As-GaAs Heterojunction Phototransistors Grown by Metalorganic Chemical Vapor Deposition( Book )

1 edition published in 1979 in English and held by 1 WorldCat member library worldwide

Auger Profile Study of the Influence of Lattice Mismatch on the LPE InGaAsP-InP Heterojunction Interface( Book )

1 edition published in 1979 in English and held by 1 WorldCat member library worldwide

Properties of tellurium- and sulfur-doped GaAs1-xPx near the direct indirect transition by G. E Stillman( )

1 edition published in 1967 in English and held by 1 WorldCat member library worldwide

Interface Properties of Lattice-Matched InGaAsP/InP Heterojunctions( Book )

1 edition published in 1981 in English and held by 1 WorldCat member library worldwide

The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray diffraction, and the energy gap was obtained by optical spectrophotometer transmission measurements. The distribution coefficients for the growth of lattice matched InGaAsP in the 1.15 to 1.31 micron spectral region were determined. The surface morphology of the epitaxial layers was found. (Author)
Gallium arsenide and related compounds : international symposium, 10th, 1982, Albuquerque, N.M( Book )

in English and held by 1 WorldCat member library worldwide

Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors by Allen William Hanson( )

1 edition published in 1994 in English and held by 1 WorldCat member library worldwide

The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly selective etches, an energy band alignment favorable for high injection efficiency devices, and the absence of DX centers. A comparison of the dc characteristics of MOCVD-grown, Npn In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs single- and double-heterojunction bipolar transistors (SHBTs and DHBTs, respectively) with carbon-doped bases is presented. A base doping level of 2.5 $\times$ 10$\sp{19}$ cm$\sp{-3}$ was employed in both device structures, resulting in a base sheet resistance of 500 $\Omega$/sq. Common-emitter current gains as high as 210 and 150 were measured for the SHBTs and DHBTs respectively. Results of a dc performance optimization study indicate that a 15 to 25 A undoped setback layer at the emitter-base junction provides optimal common-emitter current gain. The DHBTs exhibited a 40% improvement in common-base breakdown voltage compared to SHBTs (25 V versus 18 V), indicating that In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs DHBTs may prove suitable for power device applications. Details concerning the design and development of a high-frequency HBT process utilizing this materials system are also given. A unity current gain cutoff frequency, $f\sb{t}$, of 14.6 GHz was obtained for a double heterojunction In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs HBT. This device featured a 1 $\mu$m In$\rm\sb{0.5}Ga\sb{0.5}$P collector region and exhibited common-base breakdown voltage $BV\sb{CBO}$ of 45 V. The high-frequency device characteristics of the DHBTs are presented, and an estimation of the high-field electron velocity for n-type In$\rm\sb{0.5}Ga\sb{0.5}$P is determined from the results
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Properties of gallium arsenide
Alternative Names
Stillman, G. E.

Stillman, Gregory E.

Stillman, Gregory Eugene.

English (55)