WorldCat Identities

Myers, Thomas H.

Overview
Works: 9 works in 19 publications in 1 language and 252 library holdings
Genres: Conference papers and proceedings  Academic theses 
Roles: Editor, Author
Publication Timeline
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Most widely held works by Thomas H Myers
Infrared applications of semiconductors--materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A( Book )

3 editions published in 1997 in English and held by 122 WorldCat member libraries worldwide

GaN and related alloys, 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.( Book )

6 editions published in 2000 in English and held by 120 WorldCat member libraries worldwide

DEPSCOR-95 : development of nonlinear optical materials for optical parametric oscillator and frequency conversion applications in the near- and mid-infrared by Larry E Halliburton( Book )

2 editions published between 1999 and 2000 in English and held by 2 WorldCat member libraries worldwide

Point defects and their associated optical absorption bands often limit the performance of tunable laser sources (i.e., optical parametric oscillators) operating in the near and mid-infrared. Near-edge absorption in ZnGeP2 crystals and gray tracks in KTP crystals are examples of device limiting phenomena in commercially available materials, and both of these effects result from uncontrolled point defects introduced into the crystals during growth. This project identified and characterized the dominant defects in these materials. The experimental techniques employed were electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) photoluminescence (PL), optical absorption, and Hall measurements. Information obtained from these studies is published and has been provided to our industrial partners where crystal growth procedures were modified in order to minimize the particular defects being identified in our spectroscopic studies. Our industrial partners were Sanders (a Lockheed Martin Company) in Nashua, NH. and Crystal Associates, Inc. in East Hanover, NJ. Specific studies included: platinum-, silicon-, and titanium-associated traps in KTP; the zinc vacancy and cation-antisite defects in ZnGeP2; and Hall measurements of CdGeAs2
Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source( Book )

2 editions published in 1997 in English and held by 2 WorldCat member libraries worldwide

This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states which have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in areas important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students. Finally, a nationally competitive program was established as evidenced by the award of a regular ONR grant, "An Investigation of the Effects of Hydrogen on Growth Kinetics and Defect Formation in Group III-Nitride Semiconductors", (ONR-N00014-96-1-1008) as a direct offshoot of research performed on this grant
Alternative Approaches to P-type Doping in GaN and Related Alloys (CD-ROM)( Book )

2 editions published in 2005 in English and held by 2 WorldCat member libraries worldwide

ELECTRONIC FILE CHARACTERISTICS: 12 files; Adobe Acrobat (. PDF) and Microsoft Word (. DOC). PHYSICAL DESCRIPTION: 1 CD-ROM; 4 3/4 in.; 9.98 MB. ABSTRACT: This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states that have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in topics important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth and doping in GaN, a strategic material, in addition to training a significant number of students. Finally, several nationally competitive programs were established as a direct result of capabilities developed on this grant. This report describes the research performed on the grant. Much of the research is described in detail in the publications and Ph. D Dissertations appended as part of this document. Thus, the information contained herein will only be summarized in the report. The areas covered in this report can be grouped as follows: 1) Growth Kinetics and Be-doping of GaN. 2) Development of new characterization for GaN and InN. 3) Growth of SiC layers
GaN and Related Alloys. 1999( Book )

in English and held by 1 WorldCat member library worldwide

Nacala corridor study : report of Nussuib July 31-August 27,1992 ; submitted to USAID/Naputo by Duane Lougee( Book )

1 edition published in 1992 in English and held by 1 WorldCat member library worldwide

Ionic symport carriers in biological membranes : the characterization of the Na+/glucose cotransport protein by Thomas H Myers( )

1 edition published in 1992 in English and held by 1 WorldCat member library worldwide

Nacala corridor study by Duane Lougee( Book )

1 edition published in 1992 in English and held by 1 WorldCat member library worldwide

 
Audience Level
0
Audience Level
1
  General Special  
Audience level: 0.70 (from 0.44 for Ionic symp ... to 0.94 for Energy Ass ...)

Infrared applications of semiconductors--materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A
Covers
GaN and related alloys, 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
Languages
English (19)