WorldCat Identities

Koenraad, P. M. (Paul M.)

Overview
Works: 16 works in 27 publications in 2 languages and 228 library holdings
Genres: Conference papers and proceedings  Academic theses 
Roles: Editor, dgs, Thesis advisor
Classifications: QH212.S35, 502.825
Publication Timeline
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Most widely held works by P. M Koenraad
Scanning tunneling microscopy/spectroscopy and related techniques : 12th international conference, Eindhoven, the Netherlands by International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques( Book )

8 editions published in 2003 in English and held by 185 WorldCat member libraries worldwide

"The plenary and invited presentations can be found in the printed part of the proceedings, whereas the CD contains all the accepted publications"--Preface
Single-dopant semiconductor optoelectronics by "Single-Dopant Semiconductor Optoelectronics" Symposium GG( Book )

3 editions published in 2013 in English and No Linguistic content and held by 27 WorldCat member libraries worldwide

Scanning tunneling microscopy/spectroscopy and related techniques( Book )

2 editions published in 2003 in English and held by 3 WorldCat member libraries worldwide

Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots( )

1 edition published in 2005 in English and held by 1 WorldCat member library worldwide

Materiały z 12th International Symposium "Ultrafast Phenomena in Semiconductors (12-UFPS)", Wilno
Passen en meten op de schaal van atomen en in het onderwijs( )

1 edition published in 2007 in Dutch and held by 1 WorldCat member library worldwide

Inleiding We zeggen vaak ‘het is een kwestie van passen en meten’ en daarmee bedoelen we dat we zoeken naar een oplossing. Dat is de kern van wetenschappelijk onderzoek, maar ‘passen en meten’ op de schaal van atomen is ook in de letterlijke zin van toepassing op mijn vakgebied omdat we gebruik maken van het passen en mispassen van kristalroosters en omdat we op de atomaire schaal meten om de invloed van roosterspanningen te bestuderen. Ook in omgekeerde richting is ‘passen en meten’ van toepassing bij de studie van moderne halfgeleiderstructuren. Als we meten aan moderne halfgeleiderstructuren dan blijkt dat heel veel eigenschappen alleen in exact afgepaste vorm voorkomen. Deze eigenschap is uitermate interessant in toepassingen van halfgeleiderstructuren. Het is duidelijk dat onderwijs geven en organiseren ook een kwestie is van ‘passen en meten’
Scanning tunneling microscopy / 12th International Conference, STM'03 : Eindhoven, the Netherlands, 21-25 July 2003 by American Institute of Physics( )

1 edition published in 2003 in English and held by 1 WorldCat member library worldwide

Influence of growth conditions on the performance of InP nanowire solar cells( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

Abstract: Nanowire based solar cells have attracted great attentiondue to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowiresnow havecharacteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions onperformance isnecessary to improve efficiency further. We explored the effects of the growth temperature, and of theaddition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current wasreduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreasedby increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related
Scanning tunneling microscopy / 12th international conference, STM'03, Eindhoven, The Netherlands, 21-25 July 2003( Book )

1 edition published in 2003 in English and held by 1 WorldCat member library worldwide

Atomic scale investigation of isovalent impurities and nanostructures in III-V semiconductors by C. M Krammel( Book )

1 edition published in 2017 in English and held by 1 WorldCat member library worldwide

Interaction in the Final State of the Interface Luminescence with Delta-Doped Layers( Book )

1 edition published in 2001 in English and held by 1 WorldCat member library worldwide

We show that Coulomb interaction within a delta-layer of donors is governed by the neighboring two-dimensional hole gas. It has been found experimentally that the interface luminescence band displays pronounced blue shift when the two-dimensional holes recombine with delta-donors. Our analysis confirms that uniform distribution of the delta-dopants provides adequate description of the energy shift versus excitation level
Correlated Dopant Distributions in Delta-Doped Layers( Book )

1 edition published in 1998 in English and held by 1 WorldCat member library worldwide

In this paper we discuss the observation of correlations in the spatial distribution of Be atoms in delta doped layers. In Si delta doped samples we show that correlations in the charge distribution occur when DX centers are populated. The mobility enhancement we measure in our structures agrees with the calculated enhancement due to correlations effects
An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

Abstract: An atomic scale study has been performed to understand the influence of the (As, Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show that the onset of the Sb profile is steep in the Sb-containing layers whereas an appreciable segregation of Sb in the subsequently grown Sb free layers is observed. The steep rise of the Sb profile is due to extra Sb that is supplied to the surface prior to the growth of the Sb-containing layers. No relation is found between the (As, Sb) termination conditions of the Sb-containing layers and the resulting Sb profiles in the capping layers. Correspondingly we see that the optical properties of these quantum wells are also nearly independent on the (As, Sb) shutter sequences at the interface. Digital alloy growth in comparison to conventional molecular beam epitaxy growth was also explored. X-ray results suggest that the structural properties of the quantum well structures grown by conventional molecular beam epitaxy techniques are slightly better than those formed by digital alloy growth. However photoluminescence studies indicate that the digital alloy samples give rise to a more intense and broader photoluminescence emission. Cross-sectional scanning tunneling microscopy measurements reveal that lateral composition modulations present in the digital alloys are responsible for the enhancement of the photoluminescence intensity and inhomogeneous broadening
Reduction of the Intersubband Scattering Delta Doped Layers by the Lorentz-Force of an In-Plane Magnetic Field( Book )

1 edition published in 1999 in English and held by 1 WorldCat member library worldwide

In structures with a narrow delta doped layer we observe a strong anisotropy in the magnetoresistance when the current is applied either parallel or perpendicular to the in-plane magnetic field. This anisotropy is absent in structures with thick doping layers. By a detailed analysis of the solution of the Boltzmann transport equation we were able to show that the anisotropy is due to a reduction in the intersubband scattering. The reduction of the intersubband scattering is due to the fact that the Lorentz-force pushes electrons, which move perpendicular to the in-plane magnetic field direction. away from the layer of ionized impurities
The Electric Field Fluctuations and the Delta-Layer Broadening in Semiconductors( Book )

1 edition published in 1999 in English and held by 1 WorldCat member library worldwide

Charge noise and spin noise in a semiconductor quantum device by Andreas V Kuhlmann( Book )

2 editions published in 2014 in English and held by 1 WorldCat member library worldwide

The influence of ionized impurities on the transport properties of a two-dimensional electron gas( )

1 edition published in 1990 in English and held by 1 WorldCat member library worldwide

 
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Scanning tunneling microscopy/spectroscopy and related techniques : 12th international conference, Eindhoven, the Netherlands Scanning tunneling microscopy/spectroscopy and related techniques Scanning tunneling microscopy / 12th International Conference, STM'03 : Eindhoven, the Netherlands, 21-25 July 2003 Scanning tunneling microscopy / 12th international conference, STM'03, Eindhoven, The Netherlands, 21-25 July 2003
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Scanning tunneling microscopy/spectroscopy and related techniquesScanning tunneling microscopy / 12th International Conference, STM'03 : Eindhoven, the Netherlands, 21-25 July 2003Scanning tunneling microscopy / 12th international conference, STM'03, Eindhoven, The Netherlands, 21-25 July 2003
Alternative Names
Koenraad, P. M.

Koenraad, Paul M.

Languages
English (25)

Dutch (1)