WorldCat Identities

Nuese, C. J.

Overview
Works: 10 works in 19 publications in 1 language and 151 library holdings
Roles: Contributor
Publication Timeline
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Most widely held works by C. J Nuese
1.1 micrometer and visible emission semiconductor diode lasers by I Ladany( Book )

2 editions published in 1978 in English and held by 90 WorldCat member libraries worldwide

Room-temperature-operation visible-emission semiconductor diode lasers by I Ladany( Book )

3 editions published in 1977 in English and held by 46 WorldCat member libraries worldwide

Junction effects in compound semiconductors( Book )

5 editions published between 1964 and 1966 in English and held by 5 WorldCat member libraries worldwide

Progress which has been achieved in the synthesis of laser-quality Ga(As1-xPx) is reviewed. The method of synthesis and the structural, defect, and dislocation properties of the material are discussed. The general procedure for evaluation Ga(As1-xPx) in laser diodes is reviewed. Laser juctions in Ga(As1-xPx) with x=0.33 and threshold currents near 3000 A/sq cm at 77K are described. Apparatus for and experiments involving electron beam bombardment of III-V and II-VI semiconductor samples are described. The possibility of using this method to study recombination radiation in semiconductors in which currently junctions cannot be fabricated is discussed. An electron beam bombardment experiment which shows unambiguously that recombination radiation in Ga(As1-xPx) junctions originates on the p-type side of the junction is described. (Author)
Display devices by J. I Pankove( Book )

1 edition published in 2014 in English and held by 2 WorldCat member libraries worldwide

III-V Heterojunction Structures for Long-Wavelength Injection Laser( Book )

2 editions published in 1978 in English and held by 2 WorldCat member libraries worldwide

Several double heterostructure injection lasers were fabricated from vapor-grown InGaAs P/InP. Laser wavelength was 1.4 micrometer. The lowest threshold current density observed was 2385 A/sq.cm. The etching characteristics of bromine-methanol-phosphoric acid solutions on InP were tabulated. (Author)
1.1. micrometer and visible emission semiconductor diode lasers by I Ladany( Book )

2 editions published in 1978 in English and held by 2 WorldCat member libraries worldwide

Fast neutron irradiation-effects on gaas(1-x)p(x) p-n diode laser threshold currents( Book )

1 edition published in 1965 in English and held by 1 WorldCat member library worldwide

Two of the major problems associated with the construction of laser diodes from ternary system material are the chemical purity and the inhomogeneous polycrystalline nature of the final product. Both effects increase the current density necessary for laser action. In this investigation, 4 GaAs(1-x)P(x) diodes of various phosphorus substitution percentages were bombarded with fast neutrons in order to determine the dependence of threshold current densities on the total neutron flux. It appeared that surface damage effects of the laser cavity masked any information concerning the crystalline homogeneity effects on laser current thresholds. Present investigation is being made of irradiations of the initial crystal material and subsequent polishing into laser cavities to remove such surface effects. (Author)
Development of 1.0- to 1.4-Micrometer Heterojunction LEDs( Book )

1 edition published in 1980 in English and held by 1 WorldCat member library worldwide

Both VPE and LPE InGaAsP/InP edge- and surface-emitting LEDs have been fabricated and tested under the present contract. Table 1 contains a summary of the results. Although the surface emitter provides greater total power, its halfwidth is considerably larger than that of the edge emitter. This increases pulse dispersion and reduces the amount of power that can be coupled into an optical fiber. The experimental conditions for the vapor-phase growth of InGaAsP and InP alloy are described. Detailed growth procedures are specified and plots of alloy composition, bandgap, lattice parameter and doping levels vs growth parameters are included. Modulation rates close to 100 MHz have been measured for 1.27-micron edge-emitting LEDs. Fall times on the order of 10 ns for (90 to 10% response) also have been obtained. Over fifty edge-emitting VPE 1.27-micron heterojunction LEDs have been fabricated from numerous wafers. External power efficiencies equal to or greater than 0.3% were routinely measured, with maximum efficiencies on the order of 0.7% (from one edge). Wafer-to-wafer reproducibility of power efficiencies has now been demonstrated with both the LPE and VPE growth techniques
In(x)Ga(1-x)As 1.06-micrometer Injection Lasers( Book )

1 edition published in 1974 in English and held by 1 WorldCat member library worldwide

Electroluminescent junctions of In(x)Ga(1-x)As for 1.06-micrometer laser diode evaluation have been prepared by vapor-phase and liquid-phase epitaxial growth techniques. Their performance is reported. A comparison of In(x)Ga(1-x)As epitaxial layers (0 <x <0.25) prepared by LPE and VPE has shown that the liquid-phase material has significantly higher dislocation densities than the vapor-grown layers. Dislocation densities, minority-carrier diffusion lengths, and electroluminescence efficiencies are discussed. The operating life of the In(x)Ga(1-x)As p-n junctions has been found to be significantly higher than that of comparably prepared GaAs junctions. The improved resistance to gradual degradation with increasing InAs content is tentatively attributed to reduced junction emission energy and to the existence of a 'phonon-kick' degradation model. (Modified author abstract)
1.1 micrometer and visible emission semiconductor diode lasers by I Ladany( Book )

1 edition published in 1978 in English and held by 1 WorldCat member library worldwide

 
Audience Level
0
Audience Level
1
  Kids General Special  
Audience level: 0.66 (from 0.57 for 1.1 microm ... to 0.99 for Junction e ...)

Languages
English (19)