WorldCat Identities

GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.

Overview
Works: 25 works in 51 publications in 1 language and 56 library holdings
Classifications: TK5103.5,
Publication Timeline
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Most widely held works by GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.
Study of adsorption of gases on solids in the high vacuum range( Book )

5 editions published between 1962 and 1965 in English and held by 9 WorldCat member libraries worldwide

The work function of polycrystalline tungsten was measured, using the retarding field technique, as a func tion of the exposure to a carbon monoxide ambient. The work function was found to vary from 4.4 eV to 5.2 eV in going from an initially clean surface to one saturated with carbon monoxide. The successive adsorption of oxygen on a tungsten surface already saturated with carbon monoxide is inferred from the work-function data. The increase in work function (from 5.2 eV to 6.4 eV) is indicative of possibly a monolayer or more of adsorbed oxygen. The work functions for a clean (111) silicon surface, silicon exposed to 0.000003 torr-sec oxygen, and silicon exposed to 0.000009 torr-sec oxygen were found by the retarding field method to be 4.79 eV, 5.02 eV and 5.07 eV, respectively. (Author)
Studies of electron tube materials and thermionic emission processes( Book )

8 editions published between 1961 and 1963 in English and held by 8 WorldCat member libraries worldwide

The thermionic emission properties of ultra-pure Ni based oxide cathodes in the clean test diode were investigated. The effects of the following processing, activation and life conditions on thermionic emission were evaluated: (1) improvement in the cleanliness of the diode system by pre-processing the bulb, stem and supporting elements prior to final assembly of the test diode; (2) dependence of the electrolytic activation process on cathode temperature, anode voltage and anode current; (3) operation of the test diodes during life both with and without anode voltage. The method which was developed for measuring the evaporation of active material from dispenser cathodes was extended to the more difficult problem of measuring sublimation of active material from oxide cathodes. Preliminary results on the evaporation of Ba and/or BaO were obtained for the following passive and active metal base oxide systems; BaO on Pt; BaO on ultra-pure Ni rod; BaO on active N4 Ni; BaO on Ta; C-10 triple oxide coating on ultra-pure Ni; C-10 on N4 Ni. (Author)
Study of failure mechanisms in high power radio frequency generating devices( Book )

5 editions published between 1962 and 1964 in English and held by 5 WorldCat member libraries worldwide

The aim of this ivestigation is to determine failure mechanisms caused by residual gases in traveling-wave tubes and to study means of eliminating these gases in order to improve tube reliability. Gas spectra and electrical test data are shown for one tube operating at a severe life-test condition; correlation is made with tubes operating under a lower duty cycle. Gas ambient and gas sorption phenomena for tube components under operating conditions are presented for uncoated-cathode subassemblies and an oxide-coated cathode subassembly. In these subassemblies, the heater filament is the major gas source. (Author)
Semiconductor microwave amplitude and phase modulator( Book )

3 editions published in 1965 in English and held by 3 WorldCat member libraries worldwide

Experiments on the amplitude modulator indicate a linear falloff of modulation depth with drive frequency from 12.5 percent at 0.9 Gc/s to 8.4 percent at 1.4 Gc/s. It appears from these data that the useful modulation bandwidth of this device in its present configuration falls in the 1 Gc/s range. The drive power required to maintain a constant modulation index as the rf carrier power was varied over a three to one range was experimentally determined. A linear relation existed between the drive and carrier power levels. Measurements indicate that the injecting point contact can be represented by a series LCR circuit in shunt with the transmission line. On the basis of this circuit, it is possible to explain the observed decrease in insertion loss with forward bias. The stability of the GaAs varactors was improved by coating the semiconductor surface with a thin film of epoxy. However, the yield was limited, and some electrical deterioration occurred immediately after application of the epoxy coating. (Author)
Experimental study of factors controlling the effectiveness of high-temperature protective coatings for tungsten by C. D Dickinson( Book )

3 editions published between 1963 and 1965 in English and held by 3 WorldCat member libraries worldwide

The restrictions imposed by the processes of diffusion, evaporation, and coating substrate reactions on the choice of potential protective coating materials for tungsten were studied analytically and experimentally. The diffusive restriction is the most limiting and eliminates many refractory oxides with otherwise satisfactory attributes. The diffusive properties of rare earth sesquioxides and complex refractory oxides were explored by means of oxidation experiments and a layer growth experiment respectively. Mass spectrometric studies of the vaporization of refractory complex oxides were carried out to determine the applicability of the Wagner-Hauffe method of predicting vaporization rates. Provided certain thermodynamic approximations are valid and the vapor species over the complex oxide are the same as those over the pure component oxides, the predictions yield order of magnitude accuracy. A survey and exploration of reactions of possible coating materials with tungsten was performed emphasizing promising materials from the diffusion studies. (Author)
Development of improved gallium arsenide point contact varactor diodes for operation at x-band and above( Book )

1 edition published in 1962 in English and held by 2 WorldCat member libraries worldwide

HOT-ELECTRON MILLIMETER DEVICES( Book )

2 editions published between 1965 and 1966 in English and held by 2 WorldCat member libraries worldwide

A program is being conducted to explore the application of known hot-carrier effects in semiconductors to the development of new and improved microwave devices. The devices being investigated include modulators, mixers, harmonic generators, and detectors. Modulation indices of redesigned hot-carrier amplitude modulators were measured up to modulation frequencies of 1600 MHz. Three units exhibited modulation indices between 30 and 55% at 1600 MHz, and between 70 and 75% at 250 MHz. A fourth unit exhibited essentially the same modulation depth at 1600 MHz as at 250 MHz, i.e., approximately 80%. An evaluation of hot-carrier mixer sensitivity using various high-quality InSb semiconductor samples and several fabrication techniques is summarized. Experimental data are presented on the conversion loss and i.f resistance of the cooled InSb hot-carrier mixer as a function of local oscillator power level. The i.f. resistance of a hot-carrier mixer and a Schottky barrier mixer are compared as a function of local oscillator power. A theoretical analysis is presented which extends the range of validity of the so-called dc incremental method and the amplitude modulation method of measuring the conversion loss of a mixer. With peak input power on the order of 100 watts, the conversion efficiency of the harmonic generator is approximately -60 dB. (Author)
HIGH-ENERGY PULSED LIQUID LASER( Book )

2 editions published between 1967 and 1968 in English and held by 2 WorldCat member libraries worldwide

The study of high-energy liquid lasers was approached from three aspects: device, material, and optical. Two systems for circulation of the liquid medium in an operating laser were designed and constructed, and one was operated successfully. Problems concerning the optical homogeneity of the laser solution and mechanical abrasion of the pump parts remain to be solved. Most problems of materials preparation were overcome and high-quality solutions can now be prepared reproducibly. Spectroscopic and optical measurements were made, and the transition cross-section for the laser emission was calculated. The emission of the laser was studied in terms of energy output, spectral line breadth, divergence, amplification, and a new phenomenon, self Q-switching. (Author)
Nonlinear semiconductors at millimeter frequencies( Book )

2 editions published in 1965 in English and held by 2 WorldCat member libraries worldwide

A research program was conducted in which the effects of heated carriers in semiconductors were investigated and employed the design and development of novel millimeterwave devices. The devices included a video detector, heterodyne mixer, amplitude modulator, and harmonic generator, designed for operation in the 50 to 90 Gc/s range. The experimental models were designed and constructed for operation at room temperature with the exception of the InSb mixer for which significantly improved performance was achieved by cooling to liquid nitrogen temperature. The theoretical and experimental investigations of the 'thermoelectric effect' of hot carriers in a semiconductor are described. The analysis, design, and development of the experimental hot-carrier devices are presented. (Author)
Study of thin film compounds formed from simultaneously evaporated constituents( Book )

2 editions published between 1962 and 1965 in English and held by 2 WorldCat member libraries worldwide

Thin films of lead titanate suitable for forming thinfilm capacitors have been prepared by the simultaneous evaporation of lead and titanium oxides in an oxygen atmosphere. The experimental conditions for deposition of the films on silicon substrates have been established for obtaining virtually a 100 percent yield of films with a specific capacitance greater than 1 micro F/sq cm, dielectric constants in the range from 200 to 400, and a dissipation factor less than 10 percent. This high reproducibility derives from an improved understanding and control of the vapor-phase oxidation of titanium and of the interactions between the dielectric film and the metal electrodes. The current procedure for synthesis of the lead titanate films is given in detail. An Appendix provides a survey of the literature on previous work on highdielectric-constant films with the perovskite structure. (Author)
Investigation of photoconductor materials for a solid-state sonar display( Book )

2 editions published between 1964 and 1965 in English and held by 2 WorldCat member libraries worldwide

The purpose of this contract is to develop and construct a solid-state sonar display of variable persistence. The display device utilizes a layer of electroluminescent material to generate the output light and a control layer of photoconductive material which accepts an input illumination from a servo-driven wand. An opaque enamel layer between the other two layers is used to prevent optical coupling between the display output light or ambient illumination and the control photoconductor. Full-size display panels with the 50 range elements and 36 angular positions have been constructed. The photoconductor was sintered onto the panels in a specially designed two-zone furnace. Good brightness and brightness-decay uniformity have been achieved. Decay to one tenth of original brightness of 9 sec maximum and 250 ms minimum were obtained. The filter circuits of the Government-furnished equipment were tuned and the whole system performance was evaluated with an input generated by two types of simulators. One of the simulators was synchronous and generated an input which produced a fixed pattern on the display panel. A second simulator produced a constantly changing trace on the display. Both of these tests confirmed earlier predictions that the bandwidth of the filters did not permit a single element output on the panel. (Author)
Hot carrier phenomena in semiconductors at microwave frequencies( Book )

2 editions published in 1962 in English and held by 2 WorldCat member libraries worldwide

The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe measurements were made to detect phonons emitted by hot electrons in adjacent field-free regions in n-type Ge. High levels of spurious voltage pickup masked any phonon-drag effect that may have been present. small-signal measurements of conductivity and dielectric constant at 69.25 kmc as functions of dc bias field were made on one InSb sample. Very strong field dependence was observed, and it appears that this material may be appicable to variable-reactance devices at submillimeter wavelengths. Largesignal experiments were also performed in which the InSb sample was made to function as a bolometer-type peak power detector at 69.25 kmc. A hot-carrier mixer was constructed which will be used to measure the extent to which the heating of the carriers follows the field at 24 kmc. (Author)
MICROWAVE TUNNEL DIODE MIXER-AMPLIFIER( Book )

2 editions published between 1962 and 1963 in English and held by 2 WorldCat member libraries worldwide

Experimental tunnel diode mixers were designed and tested in L-, S-, and C-bands. The lowest measured noise figures were approximately 6 db in L-band, 6.5 db in S-band, and 8.5 db in C- band, as determined with an i.f.-amplifier noise figure of 2.5 db, and a 3-db i.f. bandwidth of 8 Mc centered at 60 Mc. Gallium antimonide diodes tended to yield somewhat lower noise figures than germanium diodes in all three bands. These experimental results are compared with the theoretical properties of an idealized equivalent circuit which was introduced to determine theoretical trends and tendencies worthy of experimental investigation. (Author)
LOW VOLTAGE DC LUMINESCENCE( Book )

1 edition published in 1964 in English and held by 1 WorldCat member library worldwide

A study of injection electroluminescence in p-n junctions was chosen as the most promising approach to the development of a high brightness, high-efficiency low-voltage dc injection electroluminescent light source for display device applications. The compounds GaP, AlAs, AlP, and solid solutions of them and with GaAs, were selected for study, based upon considerations of forbidden energy bandgap and a carrier mobility. Important results are the preparation of polycrystalline AlAs of relatively high purity and the use of this material to prepare single crystal epitaxial layers whose major constituent is AlAs. Epitaxial growth of AlAs layers requires temperatures above 1100C. These temperatures were obtained without introducing interference from competing reactions with the container by adapting a close-spacing procedure in which the source material and the substrate are separated by approximately 0.020 inch. This procedure also provides higher crystal growth rates than those obtained with conventional sealed-tube methods. (Author)
Investigation of refractory compounds as thermionic emitters( Book )

1 edition published in 1962 in English and held by 1 WorldCat member library worldwide

A solid-state self-scanning display device. Prepared for: Rome Air Development Center, Air Force Systems Command, U.S. Air Force by M. S Wasserman( Book )

1 edition published in 1962 in English and held by 1 WorldCat member library worldwide

Materials are investigated for use in a solidstate electroluminescent display device in which the electric field for activation of the electroluminescent layer is provided by elastic waves propagated through a piezoelectric ceramic plate which serves as the substrate for the display. The work was subdivided into a search for piezoelectric ceramics with improved properties for use as the display substrate and the input transducers, the development of procedures for fabrication of thin large-area piezoelectric ceramic plates, and a search for materials for improved nonlinear resistor layers for the suppression of spurious light in the display. (Author)
Study of fail ee mechanisms in high power radio frequency generating devices( Book )

1 edition published in 1962 in English and held by 1 WorldCat member library worldwide

This investigation undertakes to determine the causes of failures in gridded power traveling wave tubes. The gas ambient of two types of operating tubes and of individual tus sub assemblies and components are examined with an omegatron mass spectrometer permanently attached to the unit under test. Background gas ambients in envelopes containing only omegatrons are used as controls and are presented. Electrical test parameters of the traveling-wave tube in re lation to its gas ambient are presented and correlations are made with cathode activity decrease and power output decrease as functions of integrated partial gas pressures in th ating tube. Contributions made by various proc essed tube components to the gas ambient of the operating vacuum tube are presented and discussed. (Author)
OPTICAL PROPERTIES OF BINARY GAS PLASMAS( Book )

1 edition published in 1964 in English and held by 1 WorldCat member library worldwide

This report describes a project (1) to determine changes that occur in the composition of the gas during operation of a discharge tube such as is used in helium-neon lasers, and (2) to develop suitable instrumentation for such investigations. The omegatron mass spectrometer system that was developed is described, and data obtained with it on a helium-neon laser are reported. The laser output power and intensities of some lines of the emission spectrum of the discharge are also reported as functions of time of continuous operation of this laser. (Author)
Thin films formed by electrochemical reactions( Book )

1 edition published in 1962 in English and held by 1 WorldCat member library worldwide

The preparation of several hundred thin-film Ta capacitors confirmed previous findings that the type of glass and the cleaning procedure used were necessary for obtaining high-quality capacitors. With the preparation of a large number of capacitors, data have been obtained on the uniformity of capacitance values. Improvements in both uniformity and electrical characteristics resulted from a reduction of the substrate temperature during tantalum sputtering, from the treatment of the sputtering mask and from spectroscopic monitoring for impurities in the glow discharge. The evaluation of electrical properties was extended to cover a range of frequencies and temperatures. The preparation of thin-film resistors by anodization of sputtered and vacuumevaporated Ta was accomplished. Resistance was reproducible to within 0.3% of the desired value. The films were evaluated for power dissipation, and the temperature coefficient of resistance was determined as a function of sheet resistivity and film thickness. (Author)
A solid-state self-scanning display panel( Book )

1 edition published in 1964 in English and held by 1 WorldCat member library worldwide

The solid-state self-scanning display device described in this report consists basically of a piezoelectric ceramic plate which controls the point-by-point excitation of an electroluminescent phosphor layer over the plate. An investigation has been carried out for the optimization of materials and structures employed in the panel. This investigation included the electroluminescent phosphor layer, a nonlinear resistor layer used to obtain high contrast and the piezoelectric ceramic distributor with its input transducer. Techniques for coupling the different planar display components are described. An experimental model of the display panel employing the results of this investigation was constructed. Contract specifications for the model have been met or exceeded. A drive circuit for testing the display panel is described in detail. A recommendation for significantly improving the device is presented. (Author)
 
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English (46)