WorldCat Identities

GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE LAB

Overview
Works: 20 works in 26 publications in 1 language and 26 library holdings
Classifications: TK5103.5,
Publication Timeline
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Most widely held works by GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE LAB
Semiconductor microwave amplitude and phase modulator( Book )

2 editions published between 1963 and 1966 in English and held by 2 WorldCat member libraries worldwide

Injection and extraction of carriers in bulk semiconductor and in point contact diodes were investigated and applied to the design of a millimeter-wave amplitude modulator and phase modulator. An analysis of amplitude and phase modulation using a waveguide uniformly loaded with bulk semiconductor was performed. The results indicated that amplitude modulation without appreciable phase modulation could be achieved. An analysis of carrier injection in a point contact pn( - )n(+) type structure was performed and indicated that modulation bandwidths extending well into the microwave range could be achieved. A point-contact amplitude injection modulator was designed and built and experiments were performed which demonstrated the capability of the device at modulation frequencies in the audio, video, uhf and microwave ranges. Measurement techniques were developed for determining drive power and modulation depth at high modulation frequencies. Modulation indices of between 30 and 75% have been measured for drive frequencies ranging from audio to 5 GHz. The insertion loss of the device is typically less than 5 db. Two basic phase-shifter configurations were studied: the transmission type and the reflection type. (Author)
CHELATE LASERS( Book )

2 editions published between 1963 and 1964 in English and held by 2 WorldCat member libraries worldwide

The research on chelate lasers has been organized along two general lines. The first is an investigation of the properties of the materials in terms of the requirements for laser action. The second is a study of the characteristics of the chelate laser itself. The resultant information is essential for a full appreciation of the potential of chelate laser systems. A number of chelates can serve as laser materials, chemically shift the frequency of one chelate laser system by about 60 cm-1 and increase the operating temperature, in one case as high as 300 K. These results indicate that the achievement of room-temperature laser action in a circulating fluid medium is not only practicable but, at this point, awaits only the development on suitable technological services. (Author)
HOT-ELECTRON MILLIMETER DEVICES( Book )

2 editions published in 1966 in English and held by 2 WorldCat member libraries worldwide

The application is studied of known hot-carrier effects in semiconductors to the development of new and improved microwave devices. The devices being investigated include modulators, mixers, harmonic generators, and detectors. The measurement capability of modulation indices was extended by use of a spectrum analyzer capable of operation in the vicinity of 70 GHz. The feasibility of obtaining modulation bandwidths in excess of 5000 MHz with hot-carrier units was demonstrated. Experimental data on the conversion loss of cooled InSb hot-carrier mixers and room-temperature silicon Schottky barrier mixers are compared as a function of 70-GHz local-oscillator drive level. The design of a room-temperature hot-carrier mixer is described., and experimental results are presented for mixers fabricated with 2 ohm.cm p-type germanium. Conversion efficiencies of the harmonic generator operating as a frequency tripler were approximately -48 dB, with the 70-GHz pulsed input having a peak power of 50 watts. At higher input powers the conversion efficiency decreases somewhat
Free carrier microwave semiconductor devices( Book )

2 editions published between 1966 and 1967 in English and held by 2 WorldCat member libraries worldwide

A small-signal analysis is presented of the bulk terminal impedance of a CdS bar in which the drifting charge carriers and vibrating lattice interact by means of the piezoelectric coupling. Experiments on low-resistivity (semiconducting) CdS indicate that acoustoelectric interaction takes place in the crystal for applied pulse drift electric fields above a threshold field corresponding to the synchronous carrier velocity. Acousto-electric interaction occurring in a CdS obstacle in a microwave transmission line is shown to produce amplitude modulation on an X-band carrier. Laser beam probing is shown to be an excellent technique for the investigation of acousto-electric effects in piezoelectric semiconductors. It was shown that the acoustic waves could originate from piezoelectrically induced shock at inhomogenieties and also from thermal noise distributed throughout the sample. The relationship between UHF and microwave currents and the acoustic flux was elucidated. (Author)
EVALUATION OF NI-FE AND NI-ZN BATTERIES( Book )

2 editions published between 1968 and 1969 in English and held by 2 WorldCat member libraries worldwide

Work is described concerning the design and initial evaluation of Ni-Fe cells in the nickel-cadmium BB616()/U size and Ni-Zn cells in the silver-zinc BB462()/U size. The effect of parameters of cell construction such as electrode thickness, electrode geometry, separator type, electrolyte concentration, and electrolyte additives on the cell output characteristics are being evaluated in factorially designed experiments. Data analysis is being performed by multiple linear regression techniques via computer. Three experiments are described showing the significant effects of variables studies. These experiments indicate that the minimum energy density goals of 12.5 Wh/lb for Ni-Fe and 22 Wh/lb for Ni-Zn (at C/5 and 80F) can be exceeded in these cell sizes. (Author)
Conference on organic lasers, at the general telephone + electronics laborattories inc( Book )

1 edition published in 1964 in English and held by 1 WorldCat member library worldwide

Study of nonlinear effects on semiconductive materials( Book )

1 edition published in 1960 in English and held by 1 WorldCat member library worldwide

INFRARED SCATTERING STUDY( Book )

1 edition published in 1960 in English and held by 1 WorldCat member library worldwide

Study of thin film compounds formed from simultaneously evaporated constituents( Book )

1 edition published in 1964 in English and held by 1 WorldCat member library worldwide

The preparation of lead titanate thin films by simultaneous evaporation of lead and titanium oxides has been continued, with exphasis on complete oxidation of titanium while in the vapor phase, prior to film deposition. Test capacitors with lead titanate dielectric have been prepared with a specific capacitance of 1.8 microF/sq. cm. and a dissipation factor of 3.7 percent. The preparation of lead titanate capacitors on silicon substrates is in progress. (Author)
Investigation of the chemical reaction between tungsten and aluminum oxide( Book )

1 edition published in 1960 in English and held by 1 WorldCat member library worldwide

Studies of electron tube materials and thermionic emission processes( Book )

1 edition published in 1960 in English and held by 1 WorldCat member library worldwide

Study of thin film compounds formed from simutaneously evaporated constituents( Book )

1 edition published in 1963 in English and held by 1 WorldCat member library worldwide

Thin films of lead titanate have a number of advantages over barium titanate. Details of the preparation of lead titanate films by the simultaneous evaporation of lead and titanium oxides, initial attempts to increase the electrical resistance by the incorporation of small amounts of metal oxides, and preliminary experiments with insulator substrates are described. The capacitance, dissipation factor and leakage resistance of lead titanate films are comparable to those found for barium titanate. The frequency dependence of the capacitance and losses follows closely a relation given by Gevers for dielectrics of irregular structure. Strong x-ray diffraction patterns of tetragonal PbTiO3 have been obtained for films 1500 to 2500 A thick. Electron micrographs of the film surface show a uniform texture of grains of sizes between 1000 and 3000 A. (Author)
Identification of microstructural constituents and chemical concentration profiles in coated refractory metal systems by D. J Bracco( Book )

1 edition published in 1966 in English and held by 1 WorldCat member library worldwide

Coated refractory metal systems exposed to high temperatures at atmospheric pressure and at low pressures were surveyed to reveal resultant microstructure and chemical concentration profiles for interpretation of coating behavior under high-temperature oxidizing conditions. Identification of the constituents of coatings and substrates before and after oxidation is carried out mainly by electron probe techniques supplemented by x-ray diffraction. Representative substrates chosen for study include the pure metals and alloys based on Cb, Mo, Ta and W. The coatings include a selection of commercially available materials ranging from pure silicides to silicides modified with with one to three additives in trace and bulk amounts. (Author)
Thin films formed by electrochemical reactions( )

1 edition published in 1963 in English and held by 0 WorldCat member libraries worldwide

The technique of forming thin-film capacitors by the anodic oxidation of the surfaces of vacuum deposited films of aluminum, tantalum, tungsten, titanium and zirconium has been investigated. Breakdown voltages equal to or greater than the anodization forming voltage have been obtained, resulting in a usable capacitance voltage product of 13.5 microfarad v/sq cm. The uniformity of capacitance measured for a large number of test samples fell within a standard deviation of 3 percent. Electrical properties over a range of frequency and tempera ture have been evaluated. The preparation of thin-film resistors by forming vacuum-deposited metal in a predetermined pattern and then partially anodizing the deposited metal to a precise resistance has been studied for tantalum and tungsten. The properties of vacuum-deposited films of titanium and zirconium that are related to their use as resistors has also been investigated
Study of failure mechanisms in high power radio frequency generating devices( )

1 edition published in 1962 in English and held by 0 WorldCat member libraries worldwide

The aim of this ivestigation is to determine failure mechanisms caused by residual gases in traveling-wave tubes and to study means of eliminating these gases in order to improve tube reliability. Gas spectra and electrical test data are shown for one tube operating at a severe life-test condition; correlation is made with tubes operating under a lower duty cycle. Gas ambient and gas sorption phenomena for tube components under operating conditions are presented for uncoated-cathode subassemblies and an oxide-coated cathode subassembly. In these subassemblies, the heater filament is the major gas source. (Author)
Hot carrier phenomena in semiconductors at microwave frequencies( )

1 edition published in 1962 in English and held by 0 WorldCat member libraries worldwide

An expression is derived for the diffusion constant D(i) of thermal carriers in the ith valley of a many-valley semiconductor. In n-Ge, intervalley scattering is sufficiently rapid so that the actual diffusion rate depends on the average of the diffusion constant over the valleys, which is a scalar. The same result is obtained for the diffusion constant when a high electric field is applied perpendicular to the concentration gradient, except that the average must be taken over the actual energy distribution of carriers in the high field. At 3 kmc the time variation of the field is slow enough so that the instantaneous D should be equal to D for a dc field of the same magnitude. For measurements of recombination in high electric fields the method of injection was changed from surface illumination to point-contact injection. Data on recombination, conductivity and dielectric constant were obtained for high-frequency fields. Some anomalies are mentioned
Experimental study of factors controlling the effectiveness of high-temperature protective coatings for tungsten by C. D Dickinson( )

1 edition published in 1962 in English and held by 0 WorldCat member libraries worldwide

Two processes governing the efficacy of high temperature protective coatings for tungsten, interdiffusion in ternary oxygen-metal-metal systems and breakaway during oxide film growth, are being investigated experimentally to deter mine the oxidation behavior of binary alloys and the influence of substrate mechanical properties on the growth characteristics of the films. Experiments involving oxidation kinetics and the microstructural and quantitative identification of the layers formed have been conducted on four systems. An analysis of the diffusion processes governing growth in the Zr-Th- O system is pre sented, and a preliminary discussion of the re sults obtained in the W-Hf-O, ZrN-ThN-O and Sn Al-Cr systems is given
A solid-state self-scanning display device. Prepared for: Rome Air Development Center, Air Force Systems Command, U.S. Air Force by M. S Wasserman( )

1 edition published in 1962 in English and held by 0 WorldCat member libraries worldwide

Investigation is described of materials for use in a solid-state electroluminescent display de vice in which the electric field for activation of the electroluminescent layer is provided by elastic waves, propagated through a piezoelectric ceramic plating as the substrate for dis play. The first phase was devoted to a search for improved piezoelectic ceramics. In the sec ond phase of the investigation, emphasis was placed on an investigation of the problems asso ciated with integration of the piezoelectric, nonlinear resistive and electroluminescent mate rials into complete display structures. Bright ness and resolution of the display are limited by the fact that the electroluminescent layer ex hibits a nonlinear resistive characteristic at high field strength. The expected effect of im proved propagation characteristics of hot-pressed ceramics has also been assessed. Finally, it has been shown that a significant increase in bright ness can be achieved if the display design is revised. Its output pulses would be used to gate power from an independent source
Oxidation resistant coatings for tantalum alloys and other metals by L Sama( )

1 edition published in 1963 in English and held by 0 WorldCat member libraries worldwide

The effect of coating composition on structural changes and oxidation behavior was studied using a Sn-Al spray-slurry system with tantalum, tantalum alloys, columbium, tungsten and molybdenum. In tests conducted at 3000 F, it was found that increased oxidation protection was significantly related to the thickness of the tin-rich phase at the surface. Refractory metal powder additives plus excess aluminum to form aluminide particles served best to increase the thickness of this phase. Coating composition was optimized, and an extensive evaluation was carried out with Ta-10%W, Ta-30%Cb-7.5%V, and Cb-5 In oxidation tests at 1100 F to over 3000 F protective life was significantly affected by substrate composition, coating thickness and thermal cycling. Tensile and stress rupture data were obtained on coated samples at 2000 to 3000 F and correlated fairly well with data in the literature for uncoated material. Preliminary studies were made of coating stability at air pressures in the micron to millimeter range. Oxidation and diffusion effects were explored by metallographic electron probe and x-ray analysis. A brief study of Ta 10Hf-5W in contact with Al2O3 at elevated temperatures showed that this alloy was unstable in contrast to pure tantalum, Ta-10W, and Ta-30Cb 7.5V, which were quite stable
Study of adsorption of gases on solids in the high vacuum range( )

2 editions published between 1962 and 1963 in English and held by 0 WorldCat member libraries worldwide

The pumping speed of an omegatron mass spectrom eter was determined both in the presence and absence of the ionizing electron beam; when the electron beam is absent the pumping is attributed to chemical effects taking place at the hot tungsten filament. This chemical pumping speed is .0000715 liter/sec. The difference between the two pumping speeds (.00002 liter/sec) repre sents the contribution of electronic pumping to nitrogen removal. These experiments were per formed on sealed-off omegatrons; however similar pumping phenomena are present in any system using hot tungsten filaments, and their relevance in creases as the operating pressures in the experi ments decrease. Preliminary data were obtained on the interaction between oxygen and the carbon contained in the tungsten filament of the omegatron
 
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English (26)