Chernyakov, A. E.

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System by V. V Emtsev( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

On the fractal nature of light-emitting structures based on III-N nanomaterials and related phenomena by V. N Petrov( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Nanomaterial disordering in AlGaN/GaN UV LED structures( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs