WorldCat Identities

Emtsev, V. V.

Overview
Works: 11 works in 11 publications in 1 language and 17 library holdings
Roles: Author, Other
Publication Timeline
.
Most widely held works by V. V Emtsev
The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System by V. V Emtsev( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies by V. V Emtsev( )

1 edition published in 2020 in English and held by 2 WorldCat member libraries worldwide

Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

<> by V. V Kozlovski( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles by V. V Kozlovski( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Radiation-produced defects in germanium: Experimental data and models of defects by V. V Emtsev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Correlation of Mosaic Structure Peculiarities with Electric Characteristics and Surface Multifractal Parameters for GaN Epitaxial Layers( Book )

1 edition published in 2001 in English and held by 1 WorldCat member library worldwide

The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification grown on (0001) sapphire substrates have been obtained. Characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters (the Renyi dimension and the degree of the order index) of the surface topology of the mosaic structure has been observed for all GaN layers investigated
Influence of Initial MBE Growth Stage on Properties of Hexagonal InN/Al2O3 Films( Book )

1 edition published in 1999 in English and held by 1 WorldCat member library worldwide

The InGaN alloys have acquired a lot of interest for using in the active region of light emitting and lasers diodes as the band gap of these materials can be varied over nearly the whole visible spectral range when changing In content from 0 to pure InN. However due to the low dissociation temperature of InN (about 63O C) and the nitrogen equilibrium vapor pressure with a growth temperature (T(g)) good quality InN epilayers are still not easily attainable. Taking account of the large lattice mismatch between InN and sapphire it is also expected that a strain induced enhanced N re-evaporation at the initial InN monolayer growth would require a 100 - 150 C decrease of T(s) to avoid a liquid to droplet formation followed by a columnar structure growth. As a result there are only few papers to our knowledge on epitaxial InN properties and no reports on hexagonal InN films MBE growth
Monovacancy-As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: We applied positron annihilation lifetime spectroscopy to study the proton-irradiation-induced defects in germanium and its annealing behavior. The n -doped Ge ([As] = 9 × 10 17 cm −3 ) samples were irradiated at room temperature with a proton energy of 15 MeV at a dose of 10 15 cm −2 . We distinguished a complex containing a vacancy and arsenic atoms. In addition, we observed shallow positron traps, which are ascribed to the impurities in a Ge lattice crystal. Isochronal annealing experiments were carried out in the temperature interval 300-820 K. Temperature-dependent positron lifetime measurements were performed after each annealing step. During isochronal annealing of the proton-irradiated Ge, a vacancy-As complex was found to dissociate to its constituents and the single monovacancies eventually anneal out. Two annealing stages were observed: the first, at ∼450 K, was attributed to the dissociation of complexes and the second annealing stage, at 650 K, was assigned to annealing of vacancies. Shallow positron traps anneal in the temperature range 540-660 K
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge by V. V Emtsev( )

1 edition published in 2018 in English and held by 0 WorldCat member libraries worldwide

 
moreShow More Titles
fewerShow Fewer Titles
Audience Level
0
Audience Level
1
  Kids General Special  
Audience level: 0.97 (from 0.88 for Monovacanc ... to 1.00 for Interactio ...)

WorldCat IdentitiesRelated Identities
Languages
English (11)