WorldCat Identities

Hugenschmidt, Christoph

Overview
Works: 3 works in 4 publications in 1 language and 37 library holdings
Roles: Other
Publication Timeline
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Most widely held works by Christoph Hugenschmidt
Point Defects in MnSi and YBCO Studied by Doppler Broadening Spectroscopy Using a Positron Beam by Markus Reiner( )

1 edition published in 2015 in English and held by 33 WorldCat member libraries worldwide

13th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS13) 15-20 September 2013, Munich, Germany( )

2 editions published in 2014 in English and held by 3 WorldCat member libraries worldwide

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams( )

1 edition published in 2017 in English and held by 1 WorldCat member library worldwide

Abstract : Vacancy‐type defects in Mg‐implanted GaN are probed using monoenergetic positron beams. Mg + ions are implanted to provide a 500‐nm‐deep box profile with Mg concentrations, [Mg], of 1 × 10 17 –1 × 10 19  cm −3 at room temperature. In the as‐implanted samples, the major defect species is a complex of a Ga vacancy ( V Ga ) and a nitrogen vacancy ( V N ). After annealing above 1000 °C, the major defect species is changed to vacancy clusters due to vacancy agglomeration. This agglomeration is suppressed, and the agglomeration onset temperature is decreased with a decreasing [Mg]. For samples with [Mg] ≥ 1 × 10 18  cm −3, the trapping rate of positrons by vacancy‐type defects decrease after annealing above 1100–1200 °C. This decreases is attributed to the change in the defect charge states from neutral to positive due to a downward shift of the Fermi level. The carrier trapping/detrapping properties of the vacancy‐type defects and their time dependences are also revealed. Abstract : Vacancy‐type defects in Mg‐implanted GaN are probed by means of positron annihilation. In the as‐implanted samples, the major defect species is identified as a complex of a Ga vacancy and a nitrogen vacancy. After annealing treatments, the defect species is changed to vacancy clusters due to vacancy agglomeration. Using positron annihilation and illumination technique, the carrier trapping/detrapping properties of the vacancy‐type defects are revealed
 
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Audience level: 0.88 (from 0.87 for Point Defe ... to 0.93 for 13th Inter ...)

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