WorldCat Identities

Kozlovski, V. V.

Overview
Works: 23 works in 23 publications in 1 language and 34 library holdings
Roles: Other, Author
Publication Timeline
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Most widely held works by V. V Kozlovski
Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons by A. A Lebedev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers by A. A Lebedev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

<> by V. V Kozlovski( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons by O. M Korolʹkov( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers by V. V Kozlovski( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies by V. V Emtsev( )

1 edition published in 2020 in English and held by 2 WorldCat member libraries worldwide

Radiation Resistance of Devices Based on SiC by A. A Lebedev( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles by V. V Kozlovski( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs by A. A Lebedev( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers by V. V Kozlovski( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Radiation-produced defects in germanium: Experimental data and models of defects by V. V Emtsev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Radiation hardness of n-GaN schottky diodes by A. A Lebedev( )

1 edition published in 2015 in English and held by 2 WorldCat member libraries worldwide

A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC by A. A Lebedev( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System by V. V Emtsev( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes by A. A Lebedev( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Effect of recoil atoms on radiation-defect formation in semiconductors under 1-10-MeV proton irradiation by V. V Kozlovski( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Monovacancy-As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: We applied positron annihilation lifetime spectroscopy to study the proton-irradiation-induced defects in germanium and its annealing behavior. The n -doped Ge ([As] = 9 × 10 17 cm −3 ) samples were irradiated at room temperature with a proton energy of 15 MeV at a dose of 10 15 cm −2 . We distinguished a complex containing a vacancy and arsenic atoms. In addition, we observed shallow positron traps, which are ascribed to the impurities in a Ge lattice crystal. Isochronal annealing experiments were carried out in the temperature interval 300-820 K. Temperature-dependent positron lifetime measurements were performed after each annealing step. During isochronal annealing of the proton-irradiated Ge, a vacancy-As complex was found to dissociate to its constituents and the single monovacancies eventually anneal out. Two annealing stages were observed: the first, at ∼450 K, was attributed to the dissociation of complexes and the second annealing stage, at 650 K, was assigned to annealing of vacancies. Shallow positron traps anneal in the temperature range 540-660 K
Radiation-stimulated photoluminescence in electron irradiated 4H-SiC( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: The photoluminescence (PL) arising in low doped CVD grown n- and p-type 4H-SiC upon electron irradiation (0, 9 MeV) has been studied. After each doze of irradiation spectrum of PL was measured. The PL spectrum was dominated by a band peaked at hv H" 2, 45 eV, commonly observed upon irradiation of SiC. The experiments demonstrated that, for samples with both types of conduction, the PL intensity approaches a constant value with increasing irradiation dose. A model was suggested, describing the PL characteristics in terms of the radiative recombination via a donor-acceptor pair constituted by nitrogen and a structural defect formed in the course of irradiation. Also, the concentration of nitrogen atoms was measured by the SIMS method. The experimental data were used to calculate in terms of the suggested model the dependence of the PL intensity on the irradiation dose. A good agreement between the calculated and experimental dependences was observed. A conclusion is made that the PL is activated by donor--acceptor pairs constituted by a nitrogen atom and a structural defect
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I-V Characteristics and Low-Frequency Noise in 4H-SiC pin Diodes by V. A Dobrov( )

1 edition published in 2019 in English and held by 0 WorldCat member libraries worldwide

Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge by V. V Emtsev( )

1 edition published in 2018 in English and held by 0 WorldCat member libraries worldwide

 
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Audience level: 0.96 (from 0.88 for Radiation- ... to 1.00 for Interactio ...)

Languages
English (20)