WorldCat Identities

Oganesyan, G. A.

Overview
Works: 14 works in 14 publications in 1 language and 25 library holdings
Roles: Other, Contributor, Author
Publication Timeline
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Most widely held works by G. A Oganesyan
Bradyarrythmias in the obstructive sleep apnea sundrome: a dangerous complication or defense mechanism? by L. S Korostovtseva( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles by V. V Kozlovski( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Development of clinical somnology (Contibution of I.G. Karmanova) by G. A Oganesyan( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies by V. V Emtsev( )

1 edition published in 2020 in English and held by 2 WorldCat member libraries worldwide

On the influence of prenatal hypoxia on formation of the orexinergic system and sleep-wake cycle in early ontogenesis of rats by I. Yu Morina( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

The effect of motion sickness on the sleep-wake cycle in rats exposed to prenatal hypoxia by D. V Lychakov( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers by A. A Lebedev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel by V. V Emtsev( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

<> by V. V Kozlovski( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Radiation-produced defects in germanium: Experimental data and models of defects by V. V Emtsev( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Monovacancy-As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: We applied positron annihilation lifetime spectroscopy to study the proton-irradiation-induced defects in germanium and its annealing behavior. The n -doped Ge ([As] = 9 × 10 17 cm −3 ) samples were irradiated at room temperature with a proton energy of 15 MeV at a dose of 10 15 cm −2 . We distinguished a complex containing a vacancy and arsenic atoms. In addition, we observed shallow positron traps, which are ascribed to the impurities in a Ge lattice crystal. Isochronal annealing experiments were carried out in the temperature interval 300-820 K. Temperature-dependent positron lifetime measurements were performed after each annealing step. During isochronal annealing of the proton-irradiated Ge, a vacancy-As complex was found to dissociate to its constituents and the single monovacancies eventually anneal out. Two annealing stages were observed: the first, at ∼450 K, was attributed to the dissociation of complexes and the second annealing stage, at 650 K, was assigned to annealing of vacancies. Shallow positron traps anneal in the temperature range 540-660 K
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge by V. V Emtsev( )

1 edition published in 2018 in English and held by 0 WorldCat member libraries worldwide

 
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Audience level: 0.97 (from 0.88 for Monovacanc ... to 1.00 for Interactio ...)

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Languages
English (14)