WorldCat Identities

Panevin, V. Yu

Overview
Works: 9 works in 9 publications in 1 language and 8 library holdings
Roles: Other, Author
Publication Timeline
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Most widely held works by V. Yu Panevin
Photoluminescence spectra of thin films of ZnTPP-C60 and CuTPP-C60 molecular complexes by M. A Elistratova( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Terahertz reflection and emission associated with nonequilibrium surface plasmon polaritons in n-GaN( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: Surface plasmon polaritons are investigated in heavily doped n -GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to convert photons into the surface plasmon polaritons and vice versa. The spectral study of reflection demonstrates the possibility of nonequilibrium surface plasmon polaritons excitation due to terahertz radiation scattering on the grating. Terahertz electroluminescence is investigated under lateral electric field. The luminescence spectrum demonstrates a significant contribution of nonequilibrium surface plasmon polariton scattering to terahertz radiation emission
Near and Mid Infrared Spectroscopy of InGaAs/GaAs Quantum Dot Structures( Book )

1 edition published in 2001 in English and held by 1 WorldCat member library worldwide

Results of a photo- and electroluminescence study of vertically coupled in(o.5)Ga?0.5)As/GaAs quantum dot structures with extended waveguide (1.24 micrometers thick) are presented. Spectra of spontaneous and stimulated near-infrared (lambda about 1 micrometer) emission as well as spectra of spontaneous mid-infrared (lambda about 12 micrometers) emission are obtained under optical and electrical pumping. It is shown that the observed mid-infrared emission is connected with intraband electron optical transitions in the quantum dot structtures
Dynamics of mid-infrared light absorption related to photoexcited charge carriers in Ge/Si quantum dots( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: Mid-infrared optical absorption spectra of Ge/Si quantum dot structures in polarized light were obtained under conditions of interband optical excitation. Mid-infrared absorption changes in comparison to equilibrium conditions for certain light polarization in spectral range of 0.25 - 0.6 eV. The sign of the effect is found to be different in various spectral ranges. Transients of photoinduced absorption contain fast and slow components. The fast decay component of the absorption is related to the direct recombination of localized holes and electrons in quantum dots while a slow component is determined by significantly less probable processes of indirect in real space recombination
Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al0.35 Ga0.65 As0.03 Sb0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable
Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Abstract: Mid-infrared optical absorption spectra of Ge/Si quantum dot structures in polarized light were obtained under conditions of additional interband optical excitation. Photo-excited electron-hole pairs captured to quantum dots cause mid-infrared absorption changes for certain light polarization in spectral range of 0.25 - 0.6 eV. The sign of the effect is found to be different in different spectral ranges. There is an increase of absorption at the long-wavelength edge of the spectrum and a decrease of absorption at the short-wavelength edge. Absorption increase is considered to be related to contribution of optical transitions of non-equilibrium holes from the quantum dot ground states, while absorption decrease is associated with suppression of interband-like processes with generation of hole inside the dot and bound electron outside of the dot under conditions of full occupation of appropriate discrete states
The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells( )

1 edition published in 2017 in English and held by 1 WorldCat member library worldwide

Abstract: Emission of far- and near-infrared radiations in the n- GaAs/AlGaAs quantum well nanostructures under interband photoexcitation of electron-hole pairs is studied at low lattice temperatures. Optical transitions of nonequilibrium electrons involving donor impurity states in quantum wells are revealed in far- and near-infrared emission spectra. Intensive optical pumping allows to observe near-infrared stimulated emission related to the radiative recombination of electrons from the ground donor state and holes from the valence subband in quantum wells. The possibility of the intensity increase of impurity-assisted far-infrared radiation due to effective depopulation of donor states with interband stimulated emission in quantum wells is demonstrated. Highlights: The way to increase the intensity of impurity-assisted far-infrared emission in semiconductor quantum wells is proposed. Impurity-assisted far-infrared emission under interband photoexcitation in doped quantum wells is experimentally observed. Stimulated near-infrared emission involving impurity states in quantum wells is experimentally observed. Increase of the impurity-related far-infrared emission intensity due to stimulated interband emission is shown
Lateral photoconductivity in structures with Ge/Si quantum dots by V. Yu Panevin( )

1 edition published in 2013 in English and held by 0 WorldCat member libraries worldwide

Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states by D. A Firsov( )

1 edition published in 2010 in English and held by 0 WorldCat member libraries worldwide

 
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Audience level: 0.92 (from 0.88 for Photolumin ... to 1.00 for Photolumin ...)

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