Shmidt, N. M.
Overview
| Works: | 11 works in 11 publications in 2 languages and 17 library holdings |
|---|---|
| Roles: | Other, Contributor |
Publication Timeline
.
Most widely held works by
N. M Shmidt
Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters by A. E Marichev(
)
1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide
The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial by V. V Emtsev(
)
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel by V. V Emtsev(
)
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation
System by V. V Emtsev(
)
1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide
The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers by
N. A Sobolev(
)
1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide
On the fractal nature of light-emitting structures based on III-N nanomaterials and related phenomena by V. N Petrov(
)
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
Solar-blind Al x Ga1-x N (x > 0.45) p-i-n photodiodes with a polarization-p-doped emitter by
N. V Kuznetsova(
)
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide
Electrical and photoluminescence properties of bulk GaAs after surface gettering(
)
1 edition published in 2001 in Italian and held by 1 WorldCat member library worldwide
The successful results on surface gettering of background impurities and defects in 1.6 mm thick (111) GaAs wafers have been obtained. For the gettering, the wafers were coated by a 1000 Å thick yttrium film either on one side or on both sides followed by a heat treatment. It has allowed the electron concentration to decrease from (1–2)´10 15 cm -3 down to 10 8 –10 10 cm -3 and the mobility to increase from 1500–2000 cm 2 V -1 s -1 up to 7000 cm 2 V -1 s -1 at 300 K. The distribution profiles of the electron concentration and of the hole effective lifetime throughout the wafer thickness as well as photoluminescence spectra at 2 K have been presented
1 edition published in 2001 in Italian and held by 1 WorldCat member library worldwide
The successful results on surface gettering of background impurities and defects in 1.6 mm thick (111) GaAs wafers have been obtained. For the gettering, the wafers were coated by a 1000 Å thick yttrium film either on one side or on both sides followed by a heat treatment. It has allowed the electron concentration to decrease from (1–2)´10 15 cm -3 down to 10 8 –10 10 cm -3 and the mobility to increase from 1500–2000 cm 2 V -1 s -1 up to 7000 cm 2 V -1 s -1 at 300 K. The distribution profiles of the electron concentration and of the hole effective lifetime throughout the wafer thickness as well as photoluminescence spectra at 2 K have been presented
Correlation of Mosaic Structure Peculiarities with Electric Characteristics and Surface Multifractal Parameters for GaN Epitaxial
Layers(
Book
)
1 edition published in 2001 in English and held by 1 WorldCat member library worldwide
The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification grown on (0001) sapphire substrates have been obtained. Characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters (the Renyi dimension and the degree of the order index) of the surface topology of the mosaic structure has been observed for all GaN layers investigated
1 edition published in 2001 in English and held by 1 WorldCat member library worldwide
The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification grown on (0001) sapphire substrates have been obtained. Characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters (the Renyi dimension and the degree of the order index) of the surface topology of the mosaic structure has been observed for all GaN layers investigated
Nanomaterial disordering in AlGaN/GaN UV LED structures(
)
1 edition published in 2015 in English and held by 1 WorldCat member library worldwide
Abstract: Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs
1 edition published in 2015 in English and held by 1 WorldCat member library worldwide
Abstract: Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I-V Characteristics and Low-Frequency Noise in 4H-SiC pin
Diodes by V. A Dobrov(
)
1 edition published in 2019 in English and held by 0 WorldCat member libraries worldwide
1 edition published in 2019 in English and held by 0 WorldCat member libraries worldwide
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Related Identities
- SpringerLink (Online service) Other
- Chernyakov, A. E. Other Contributor
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- Emtsev, V. V. Author
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- Gudkov, A. G. Other Contributor
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