WorldCat Identities

Ferrari, Philippe (1966-....; auteur en optoélectronique)

Overview
Works: 48 works in 50 publications in 2 languages and 69 library holdings
Roles: Thesis advisor, Opponent, Other, Author
Publication Timeline
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Most widely held works by Philippe Ferrari
Conception et réalisation de fonctions millimétriques en technologie BiCMOS 55nm by Ayssar Serhan( )

1 edition published in 2015 in French and held by 2 WorldCat member libraries worldwide

In the past few years, the feasibility of high performance millimeter-wave(mmWave) fully-integrated transceivers has been widely demonstrated in both CMOS andBiCMOS silicon technologies. Nowadays, automatic level control (ALC) solutions and in-situtesting (BIT: Built in Testing) and characterization of mmWave components, constitute themajor research interest in mmWave domain. This work focus on the development of the mainbuilding blocks (power detectors and baluns) that meet the requirement of the today'smmWave ALC and BIT applications. The developed prototypes take advantage of the highperformances transistors offered by the BiCMOS 55 nm technology, from STMicroelectronics, aswell as the high performances of the slow-wave based passive components developed by theIMEP-LAHC laboratory. Several prototypes were developed as a proof of concept for thedesignated applications. This work helps future generation millimeter-wave systems to havefaster development and better robustness
Nouvelles Topologies des diviseurs de puissance, balun et déphaseurs en bandes RF et millimétiques, apport des lignes à ondes lentes by François Burdin( )

1 edition published in 2013 in French and held by 2 WorldCat member libraries worldwide

The first purpose of this work was the use of slow-wave coplanar waveguides (S CPW) to achieve various passive components with the aim to show their great potential and interest at millimetre-waves. Several CMOS or BiCMOS technologies were used: CMOS 65 nm and 28 nm, and BiCMOS 55 nm. Two baluns, one based on a rat-race topology and the other based on a modified Wilkinson power divider, and a phase inverter, were achieved and measured in a 65 nm CMOS technology. State-of-the-art results were achieved. A branch-line coupler and an in phase power divider without isolation were designed in a 28 nm CMOS technology. Really good performances are expected for these compact devices being yet under fabrication. Then, a new topology of in phase and isolated power divider was developed, leading to more flexibility and compactness, well suited to millimetre-wave frequencies. Two power dividers with different characteristics were realized in a PCB technology at 2.45 GHz by using microstrip lines, as a proof-of-concept. After that, a power divider was designed at the working frequency of 60 GHz in the 55 nm BiCMOS technology with S CPWs. The simulation results showed a low loss, full-matched and isolated component, which is also under fabrication and will be characterized as soon as possible. Finally, two new topologies of reflection type phase shifters were presented, one for the RF band and one for the millimetre-wave one. For the one in RF band, the phase shift can reach more than 360° with a great figure-of-merit as compared to the state-of-the-art. Concerning the phase shifter in the millimetre-wave band, the simulation results show a phase shift of 341° with also a high figure-of-merit
Conception et étude d'une synthèse de fréquence innovante en technologies CMOS avancées pour les applications en bande de fréquence millimétrique by Clément Jany( )

1 edition published in 2014 in French and held by 2 WorldCat member libraries worldwide

The 60-GHz unlicensed band is a promising alternative to perform the high data rate required in the next generation of wireless communication systems. Complex modulations such as OFDM or 64-QAM allow reaching multi-gigabits per second throughput over up to several tens of meters in standard CMOS technologies. This performance rely on the use of high performance millimeter-wave frequency synthesizer in the RF front-end. In this work, an original architecture is proposed to generate this high performance millimeter-wave frequency synthesizer. It is based on a high order (several tens) multiplication of a low frequency reference (few GHz), that is capable of copying the low frequency reference spectral properties. This high order frequency multiplication is performed in two steps. Firstly, a multi-harmonic signal which power is located around the harmonic of interest is generated from the low frequency reference signal. Secondly, the harmonic of interest is filtered out from this multi-harmonic signal. Both steps rely on the specific use of oscillators. This work deals with the circuit design on advanced CMOS technologies (40 nm CMOS, 55 nm BiCMOS) for the proof of concept and on the theoretical study of this system. This novel technique is experimentally validated by measurements on the fabricated circuits and exhibit state-of-the-art performance. The analytical study of this high order frequency multiplication led to the discovery of a particular kind of synchronization in oscillators and to approximated solutions of the Van der Pol equation in two different practical cases. The perspectives of this work include the design of the low frequency reference and the integration of this frequency synthesizer in a complete RF front-end architecture
Apport de l'effet d'ondes lentes pour la miniaturisation d'antennes et pour des applications de capteurs d'humidité by Anh Tu Ho( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

The substrate integrated waveguide (SIW) technology has been known at the end of the twentieth century, drawing interest from researchers and industry due to their low loss, high power handling, electromagnetic immunity and low-cost manufacturing. However, their large dimension is considered as a major drawback for their integration into a RF system below 15 GHz. To offer a high miniaturization, the slow-wave SIW (SW-SIW) technology was proposed in 2014. Hence, during this research, a novel SIW cavity-backed antenna using the slow-wave concept (SW-CBSA) was investigated, leading to a miniaturization of 47%, and a gain of 5 dBic. Two 1x4 antenna arrays were also carried out, a first one using a slow-wave microstrip-based feeding network and a second one using a SW-SIW-based one to improve electromagnetic shielding. Both antenna arrays offer good performance (with a measured gain of 10.8 dBi), and a strong size reduction (about 65%) as compared to the classical SIW-based antenna array counterpart. Then, passive microwave sensors for humidity detection were developed by combining the SW and air-filled (AF) SIW technologies. Thus, a PAF SW SIW resonator and a quarter-mode PAF-SW-SIW antenna were realized, leading to a surface miniaturization of 74% and 93%, respectively, as compared to AF-SIW. For the quarter-mode PAF-SW-SIW antenna, a measured sensitivity of 283 kHz/RH% was obtained. The two proposed research topics developed in this PhD thesis allow demonstrating the interest of slow-wave topology for size reduction while keeping interesting performance
Lignes de propagation intégrées à fort facteur de qualité en technologie CMOS. Application à la synthèse de circuits passifs millimétriques by Anne-Laure Franc( )

1 edition published in 2011 in French and held by 2 WorldCat member libraries worldwide

This work focuses on high-performance S-CPW (Shielded CoPlanar Waveguide) transmissionlines in classical CMOS integrated technologies for the millimeter-wave frequency band.Thanks to an important slow-wave phenomenon, the physical length of S-CPW decreases by afactor from 1.3 to 3.2 compared with classical transmission lines. Presenting also lowattenuation loss, the developed transmission lines show very high quality factor (higher than 40at 60 GHz). The precise study of the electromagnetism field leads to an electrical model forS-CPWs. This is the first model that takes the losses in this topology into account. Then, somebasic passive circuits designed with S-CPWs and characterized up to 110 GHz are presented invarious CMOS technologies. The low insertion losses and relative low surfaces of a powerdivider and a passband filter show the great interest of S-CPW to integrate compact passivecircuits in classical CMOS technologies at millimeter-wave frequencies
Test embarqué des circuits RF en utilisant des capteurs non-intrusifs by Athanasios Dimakos( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

This thesis addresses the high-volume production test problem for RF and millimeter-wave (mm-wave) circuits. Testing the RF/mm-wave functions of systems-on-chip (SoCs) incurs a very high cost. Built-in test is a promising alternative to facilitate testing and reduce costs, but it is challenging since it should by no means degrade the performance of the Circuit Under Test (CUT). In this work, we study a built-in test technique which is based on non-intrusive variation-aware sensors. The non-intrusive property is very appealing for designers since the sensors are totally transparent to the design and, thereby, the test is completely dissociated from the design. The non-intrusive sensors are dummy analog stages and single layout components that are copied from the topology of the CUT and are placed on the die in close physical proximity to the CUT. They simply offer an “image” of process variations and by virtue of this they are capable of tracking variations in the performances of the CUT. In essence, the technique capitalizes on the undesired phenomenon of process variations. The alternate test paradigm is employed to map the outputs of the non-intrusive sensors to the performances of the CUT, in order to replace the standard tests for measuring the performances directly. The proposed test idea is applied to two different CUTs, namely a 2.4GHz CMOS 65nm inductive degenerated Low-Noise Amplifier (LNA) and a wide-band mm-wave 60GHz CMOS 65nm 3-stage LNA. We demonstrate that by adding on-chip a few non-intrusive sensors of practically zero area-overhead and by obtaining on these non-intrusive sensors DC or low-frequency measurements, we are able to track variations in all performances of the CUT with an average prediction error lower than one standard deviation of the performance and a maximum prediction error that is lower or at least comparable to the measurement and repeatability errors in a conventional Automatic Test Equipment (ATE) environment
Étude détaillée des dispositifs à modulation de bandes dans les technologies 14 nm et 28 nm FDSOI by Hassan El dirani( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Durant les 5 dernières décennies, les technologies CMOS se sont imposées comme méthode de fabrication principale pour les circuits semi-conducteurs intégrés avec notamment le transistor MOSFET. Néanmoins, la miniaturisation de ces transistors en technologie CMOS sur substrat massif atteint ses limites et a donc été arrêtée. Les filières FDSOI apparaissent comme une excellente alternative permettant une faible consommation et une excellente maîtrise des effets électrostatiques dans les transistors MOS, même pour les nœuds technologiques 14 et 28 nm. Cependant, la pente sous le seuil (60 mV/décade) du MOSFET ne peut pas être améliorée, ce qui limite la réduction de la tension d'alimentation. Cette restriction a motivé la recherche de composants innovants pouvant offrir des déclenchements abrupts tels que le Z2-FET (Zéro pente sous le seuil et Zéro ionisation par impact), Z2-FET DGP (avec double Ground Plane) et Z3-FET (Zéro grille avant). Grace à leurs caractéristiques intéressantes (déclenchement abrupte, faible courant de fuite, tension de déclenchement ajustable, rapport de courant ION/IOFF élevé), les dispositifs à modulation de bandes peuvent être utilisés dans différentes applications. Dans ce travail, nous nous sommes concentrés sur la protection contre les décharges électrostatiques (ESD), la mémoire DRAM embarquée sans capacité de stockage, et les interrupteurs logiques. L'étude des mécanismes statique et transitoire ainsi que des performances de ces composants a été réalisée grâce à des simulations TCAD détaillées, validées systématiquement par des résultats expérimentaux. Un modèle de potentiel de surface pour les trois dispositifs est également fourni
Développement de solutions BIST (Built-In Self-Test) pour circuits intégrés radiofréquences/millimétriques by Florent Cilici( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

Les technologies silicium récentes sont particulièrement prônes aux imperfections durant la fabrication des circuits. La variation des procédés peut entrainer une dégradation des performances, notamment aux hautes fréquences. Dans cette thèse, plusieurs contributions visant la réduction des coûts et de la complexité du test des circuits millimétriques sont présentées. Dans ce sens, deux sujets principaux ont fait l'objet de notre attention : a) le test indirect non-intrusif basé sur l'apprentissage automatique et b) la calibration non-itérative "one-shot". Nous avons en particulier développé une méthode générique pour implémenter un test indirect non-intrusif basé sur l'apprentissage automatique. La méthode vise à être aussi automatisée que possible de façon à pouvoir être appliquée à pratiquement n'importe quel circuit millimétrique. Elle exploite les modèles Monte Carlo du design kit et des informations de variations du BEOL pour proposer un jeu de capteurs non-intrusifs. Des mesures à basses fréquences permettent ensuite d'extraire des signatures qui contiennent des données pertinentes concernant la qualité des procédés de fabrication, et donc a fortiori de la performance du circuit. Cette méthode est supportée par des résultats expérimentaux sur des PAs fonctionnant à 65 GHz, conçus dans une technologie 55 nm de STMicroelectronics. Pour s'attaquer plus encore à la dégradation des performances induite par les variations des procédés de fabrication, nous nous sommes également penchés sur une procédure de calibration non-itérative. Nous avons ainsi présenté un PA à deux étages qui peut être calibré en post-fabrication. La méthode de calibration exploite une cellule de découplage variable comme moyen de modifier les performances de l'amplificateur. Des moniteurs de variations des procédés de fabrication, placés dans les espaces vides du circuit, sont utilisés afin de prédire la meilleure configuration possible pour les cellules de découplage variables. La faisabilité et les performances de cette approche ont été validés en simulation
Conception et réalisation d'adaptateurs d'impédances et de diviseurs de puissance miniatures et accordables par varactors by Anne-Laure Perrier( Book )

2 editions published in 2006 in French and held by 2 WorldCat member libraries worldwide

To decrease the size of some radio-frequency systems, the design of tunable devices is a solution currently exploited. The tuners and the power dividers are devices frequently used respectively for the transistor or antenna matching and for the realization of phase array antenna. Generally based on the principle of the quarter wave line, these bulky devices present limited and fixed bandwidth. In this thesis, we developed a theoretical study and designed of tunable and miniaturized tuners and power dividers using varactors. We show we could realized compact devices not based on the classical quarter wave line but on the principle of a high characteristic impedance transmission line charged by capacitors. Two methods are presented to optimize and measure a miniature and tunable tuner. Then we present several miniature power dividers. The ones are fixed, the other are tunable in frequency, isolation or power
Etude de filtres RF planaires miniatures. Amélioration de la réjection hors-bande et accordabilité by Mirna Akra( )

1 edition published in 2014 in English and held by 2 WorldCat member libraries worldwide

The purpose of this work was to develop RF bandpass filters in PCB technology,with three main objectives. The first objective was to develop synthesis formulas tosimplify the design procedure of the filter. The second was to achieve wideout-of-band rejection without modifying the in-band filtering characteristics. Thethird objective was to control the center frequency of the filter by using varactordiode.The bandpass filter topology treated in this thesis is based on Stub-LoadedResonators (SLR). The main features of this filter topology were treated. Equivalentcircuits based on J-inverters and susceptance parameters were derived. Based onthese equivalent circuits, synthesis formulas were developed. Simulations werepresented to validate the synthesis theory. For a proof-of-concept, third orderstripline bandpass filters were designed and fabricated based on this synthesis.Analysis technique using odd- and even- mode was achieved on the SLR. Thusresonance odd- and even-mode conditions were derived. These conditions aim toeasily control the first spurious frequency. Moreover, to go further in improving theout-of-band rejection a new technique, called “U corner structure”, was developedand design rules were derived. Based on these design rules an extended out-of-bandrejection was achieved without any modification in the passband and by maintainingthe compactness of the filter. A first spurious frequency was localized at up to ninetimes the working frequency in the case of the Parallel-coupled Stub-Loadedresonator (PC-SLR) filter. Also, by applying this technique into the classicalparallel-coupled filter the first and second spurious frequencies were rejected. Toaddress the issue of tunable filters, the SLRs were correctly loaded by variablecapacitors (varactor diode). The center frequency of the PC-SLR filter was easilycontrolled by maintaining a large out-of-band rejection
Conception de VCO millimétrique basé sur les lignes de transmission à ondes lentes by Ekta Sharma( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Ce travail se concentre sur la conception de VCO mm-wave pour les applications de Backhaul en BiCMOS 55 nm technologie. Toutes les conceptions de VCO proposées sont par rapport à conventionnel LC-tank oscillateur. La première conception de l'oscillateur proposé fonctionne entre 81-86 GHz. L'innovation est liée à l'utilisation d'une bande coplanaires ondes lentes (S-CPS) comme inducteur différentiel. Grace à facteur de qualité élevé (≈ 33) de S-CPS, le bruit de phase a été amélioré de 20 dBc/Hz à l'offset 10MHz et la consommation d'énergie a été réduite de 14% aussi. La plage de réglage de fréquence (FTR) était de 5,3 GHz seulement. La seconde conception du VCO est sur la base de ligne déphaseur chargé comme un résonateur. Le déphaseur a été conçu en utilisant une topologie dissymétrique de S-CPS, afin de parvenir à une meilleure FTR. Mais la performance réalisée de VCO n'a pas été beaucoup améliorée en raison de la capacité parasite en charge. Ainsi, avec le même dissymétrique résonateur déphaseur sur la base d'un oscillateur d'onde permanente distribuée a été conçu, ce qui a réduit l'effet de charge et de conduire à une FTR de 8 GHz. Enfin, un buffer moins mm-wave oscillateur stationnaire a été conçu. Dans ce proposé moins oscillateur buffer, il a montré que l'impédance caractéristique de sortie peut être envisagé grâce à un choix judicieux de la position de sortie. Par conséquent, aucun buffer de sortie n'est nécessaire dans la conception proposée, en raison de la flexibilité dans le choix de la position long de sortie de SWO. Cette innovation conduit à deux mérites. Tout d'abord une sortie 50 ohms peut-être synthétisé sans consommation d'énergie supplémentaire et d'autre part la taille est réduite si un réseau d'adaptation est nécessaire pour connecter le VCO à un mélangeur ou un autre bloc de construction du système d'émetteur-récepteur
Synthèse de RCS pour la conception de tags RFID sans puce à forte capacité de codage by Olivier Rance( )

1 edition published in 2017 in French and held by 2 WorldCat member libraries worldwide

The important growth of RFID goes along with the development of many technologies which complement the current offer by adding new possibilities. The chipless RFID is a perfect example of such technology. The purpose of the approach is to considerably reduce the price of the tag while increasing the data encoding capacity in order to compete with the barcode. The RF link between the tag and the reader also permit a flexible reading. In order to increase the coding capacity of a chipless tag, this PHD work proposes a new coding method based on the overall shape of the electromagnetic signature. To do this, we must be able design tags for which the RCS is given in advance, which amounts to the resolution of an inverse problem. A method based on the decomposition of the RCS on a base of resonators is proposed. The main characteristics of these base elements (amplitude, frequency, quality factor) are controlled by geometric parameters
Commutateurs RF à base de matériaux à changement d'état : conception, caractérisation et application by Alexandre Leon( )

1 edition published in 2018 in French and held by 2 WorldCat member libraries worldwide

Pour faire face à la complexité croissante des systèmes de télécommunications sans fil, il est nécessaire de développer des systèmes RF (Radiofréquence) plus performants et agiles. Dans ce contexte, des matériaux à changement d'état, ou SCM (State Change Material), déjà utilisés dans le développement des futures générations de mémoires non-volatiles (PCRAM, CBRAM), ont récemment été évalués pour réaliser des commutateurs RF. Parmi ces SCM, les PCM (matériaux à changement de phase) semblent ainsi être une solution particulièrement attractive pour réaliser des composants RF permettant l'obtention de circuits reconfigurables, rapides, miniatures et intégrables sur des circuits CMOS.En lien avec la stratégie du LETI / DCOS (Département COmposants Silicium) et en s'appuyant sur une analyse fine de la physique des matériaux à changement d'état, la thèse aura pour objectif de développer une nouvelle filière technologique de composants RF en rupture à base de SCM qui permettront de concevoir de nouvelles architectures de circuits RF innovants et reconfigurables
Capteurs embarqués non-intrusifs pour le test des circuits RF by Louay Abdallah( )

1 edition published in 2012 in French and held by 2 WorldCat member libraries worldwide

This thesis aims to study techniques such BIST for RF front-end, whereas new types of simple integrated sensors for signal extraction. These signals and stimuli associated test will then be processed by machine learning algorithms that will allow prediction of the performance of different blocks of the system. An evaluation of the proposed sensor as parametric test metrics and coverage of catastrophic faults will be needed to reach test techniques for low-cost production test, allowing a significant reduction in the cost of products
Guides à ondes lentes intégrés dans le substrat pour les applications en bandes RF et millimétriques by Matthieu Bertrand( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

The last decades have seen the evolution of communication networks towardgreater complexity and efficiency, being now able to carry significant data rates. This evolution is the result of both scientific and technological breakthroughs. Thanks to the wide bandwidths available at millimeter-wave frequencies, the future generations will be able to supply for the the increasing demand in multimedia services, especially high-definition videos. The design of wireless systems which operate at high frequencies with acceptable efficiency, costs, and minimum size thus constitute a decisive challenge. In this context, this work focuses on the development of passive circuits such as filters, couplers and waveguides which address these issues. We developed a miniaturization technique for printed circuits technology, which in a first step is dedicated to frequencies below 20 GHz. This technique is based on a slow-wave concept, defined as the property of any structure which impose lower velocities to the electromagnetic waves. A theoretical analysis, as well as design methods were established and confirmed by measurements. Secondly, we proposed two distinct technological solutions for the integration of efficient waveguides at millimeter-wave frequencies. This work was achieved in collaboration with two other laboratories. A theoretical study, design of test features and measurementswere performed. These results intend to constitute a basis for the future realization of miniaturized slow-wave circuits at millimeter-wave frequency bands
Etude et réalisation de réseaux d'adaptation d'impédances accordables linéaires et non linéaires, sur PCB et silicium CMOS, pour des applications en radiofréquences by Vitor Freitas( )

1 edition published in 2012 in French and held by 2 WorldCat member libraries worldwide

The aim of this research was the design of tunable matching networks, in two different contexts: the TMN at low and high signals.Performance criteria of TMN were studied. A general expression has been developed that estimates the TMN efficiency in function of the quality factor of the components used. The impedance coverage of different RAA topologies was plotted in function of the insertion losses.For the small signal, we designed a prototype in PCB, composed by two TMN, which ensure the simultaneous matching of a power amplifier in a wide range of impedances, included in a circle of the Smith chart VSWR < 5: 1. The coverage area was measured and presented in function of the insertion losses, emphasizing the areas where the TMN contribute to improve the amplifier performance and those where insertion losses of the TMN are not able to compensate gain with the reduction of the reflection coefficients.Subsequently, we discussed the design of TMN for the large signal. The objective is to present at the output of a power amplifier, the impedances that optimize efficiency for each power of operation. A 130 nm SOI prototype was designed and simulated, consisting of a power amplifier for WCDMA standard, 900 MHz, and a MN tunable by MOS varactors able to produce the optimal impedances corresponding to an output power between 20 and 30 dBm. The results showed the benefit provided by inserting a tunable MN compared to a fixed one
Synthesis and design of tunable microwave bandpass filters using planar patch resonators by Ariana Maria da Conceição Lacorte Caniato Serrano( )

1 edition published in 2011 in English and held by 2 WorldCat member libraries worldwide

The objective of this thesis is the design and synthesis of tunable bandpass filters at microwave frequencies using planar patch resonators. A methodology for the design and synthesis of tunable patch filters is developed and applied to two filters with triangular and circular topologies. The methodology provides techniques to extract the coupling scheme that models the filter behavior and the necessary equations for calculating the corresponding coupling matrix. Then, the theoretical filter response resulting from the analysis of the coupling matrix coefficients is compared to the results of complete simulations. The complete simulations combine the results of the 3D electromagnetic (EM) simulation of the filter layout with the results of the electrical simulation of the tuning devices, represented by their lumped elements equivalent model. This allows the correct model of the tuning effect and the definition of the tuning possibilities and limits. In order to validate the methodology, the tunable patch filters are fabricated using Microwave Integrated Circuit (MIC) technology on flexible substrates. The minimum dimensions are greater than 0.5 mm, ensuring a low cost fabrication process
Déphaseurs en bande millimétrique basés sur des lignes à ondes lentes accordables en technologie MEMS dans un process post-CMOS by Victoria Nasserddine( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

This work focuses on the design of millimeter-wave phase shifters based on a new topology of tunable transmission lines named Tunable Slow wave CoPlanar Waveguide (TS-CPW). TS-CPW uses, on one side, the slow wave phenomenon in order to miniaturize longitudinally the transmission line and to show a better quality factor than its integrated microstrip transmission line counterpart and, on the other side, the MEMS approach to achieve tunability of the transmission line with a good figure-of-merit. First, the topology, the design and the electromagnetic simulations of the TS-CPW based on MEMS (Micro Electro Mechanical system) are presented in a BiCMOS technology. Next, phase shifters with 3-bit of resolution based on TS-CPWs are developed at 60 GHz with two different values of total phase shift (157.5° and 315°). These TS-CPWs and phase shifters were fabricated in IHP's 0.25 µm BiCMOS technology and measured on the vector network analyzers of IHP and IMEP-LaHC
Lignes couplées à ondes lentes intégrées sur silicium en bande millimétrique - Application aux coupleurs, filtres et baluns by Jose Lugo Alvarez( )

1 edition published in 2015 in English and held by 2 WorldCat member libraries worldwide

This work focuses on high-performances CS-CPW (Coupled Slow-wave CoPlanar Waveguide) transmission lines in classical CMOS integrated technologies for the millimiter-wave frequency band. First, the theory as well as the electrical models of the CS-CPW are presented. Thanks to the models and electromagnetic simulations, directional couplers with different coupling levels (3 dB, 10 dB, 18 dB) were designed in BiCMOS 55 nm technology. They have a good directivity, always better than 15 dB. A first prototype of a coupler was measured at 150 GHz presenting good agreement with the simulations. Next, coupled-line base filters were developed at 80 GHz using the CS-CPWs. Simulation present competitive results with the state-of-art: 11% of fractional bandwidth and a unload quality factor of 25. Finally, three projects started based on the CS-CPWs. The projects are currently used in two theses and one internship: a RTPS at 47 GHz, an isolator at 75 GHz and a balun at 80 GHz
Conception et réalisation de filtres microondes planaires accordables par varactors, à base de structures périodiques by Emmanuel Pistono( Book )

2 editions published in 2006 in French and held by 2 WorldCat member libraries worldwide

The aim of this work was to design tunable RF/microwave filters. After having drawn up a state of the art of tunable microwave filters, factors of merit were proposed to compare these kinds of devices. Next, three topologies of tunable filters were developed. These filters are based on planaI' periodic structures consisting in transmission lines and capacitors loading these lines. For these three studies, semi-distributed based modelizations were done, by taking a distributed model of transmission lines and a lumped model of considered capacitors into account. Straightforward design rules have been derived. Fixed and tunable filters were designed with these methods of conception and then carried out in an hybrid coplanar technology. Workingfrequency- and/or bandwidth-tunings of these filters are obtained by using reverse-biased varactor diodes loading the transmission lines, these varactors showing acceptable quality factors at the considered working frequencies (between 0,5 and 9 GHz for our prototypes). Measurements of manufactured prototypes allowed to validate theoretical studies
 
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