WorldCat Identities

Jin, Yong

Overview
Works: 7 works in 8 publications in 2 languages and 12 library holdings
Roles: Other, Thesis advisor, Author, Opponent
Publication Timeline
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Most widely held works by Yong Jin
Electronique cryogénique et réalisation de boîtes quantiques sur substrat SOI pour le calcul quantique by Heorhii Bohuslavskyi( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

This thesis studies cryogenic electronics and quantum dots on silicon-on-insulator (SOI) for quantum computing. Different types of electron and hole quantum dots are fabricated with Leti's SOI nanowire (NW) and planar 28nm FD-SOI technology. In the first part, Pauli Spin Blockade (PSB) is studied for the first holes down to 60mK. We show that it is governed by a strong spin orbit coupling (SOC). The intradot relaxation rate of 120kHz was found for the first holes. The access barriers tunability realized with additional gates was proven to be efficient regarding the isolation of qubit from source/drain metallic leads. Following the recent demonstration of electron-dipole spin resonance (EDSR) achieved in electron quantum dots confined in the corners of silicon nanowire (CDs), we deeply investigated quantum dots in several multi-gate samples under different body-biasing conditions. Based on preliminary cryogenic transport measurements, an operation protocol for a compact two electron spin qubit gate has been proposed.Regarding cryogenic electronics required for an efficient control, manipulation and read-out of a large number of qubits, the low temperature digital and analog performance of 28nm FD-SOI MOSFETs was analysed from room temperature down to 4K. Significant improvements in transistor performance are achieved with a clear enhancement of carrier mobility and a strong reduction of subthreshold swing (SS), even for short-channel devices with gate length down to 28nm. The saturation of the subthreshold swing at low temperature is explained with a new analytical model developed in this thesis. By introducing a narrow tail in the density of states at the edges of the conduction and valence bands and using the Fermi-Dirac statistics, an excellent agreement of SS is achieved between experiments and modelling. The analysis of the SS-IDS metric under different forward body-biasing (FBB) conditions has revealed that the increased density of interface traps cannot be responsible for the SS saturation at low temperature. By adding a slight exponential variation in the interface trap density, we show that the SS-IDS curve can be well reproduced over more than 6 decades, paving a way for an efficient cryogenic design of CryoCMOS.In a second time, cryogenic performance of Ring Oscillators (RO) down to 4K was investigated. We have shown that the optimal supply voltage can be reduced down to 0.3V. This allows to efficiently reduce the dynamic and static power dissipations. At the same time, a small Energy-Delay product of 6.9fJ.ps with a delay per stage of 37ps were achieved at VDD=0.325V under aggressive FBB.Finally, in the last chapter, the duality of short-channel FD-SOI transistors operation as FETs or SETs is demonstrated at 4K. By benchmarking the QDs with respect to the common silicon platforms, we show that 28nm FD-SOI technology has a great potential for both cryogenic electronics and qubits
High-SNR spectrum measurement based on Hadamard encoding and sparse reconstruction by Zhaoxin Wang( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Vers la cryoélectronique ultra sensible : étude expérimentale des caractéristiques statiques et du bruit en 1/f du HEMT à 4,2K by Tristan Lucas( Book )

2 editions published in 2003 in French and held by 2 WorldCat member libraries worldwide

Low-Cost and Active Control of Radiation of Wearable Medical Health Device for Wireless Body Area Network by Yong Jin( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

La génération de courant quantifié par des dispositifs en silicium pour la métrologie quantique by Paul Clapera( )

1 edition published in 2015 in French and held by 2 WorldCat member libraries worldwide

Electrons pumps have been extensively studied and manufactured by the scientific world. They generate a DC current proportional to a frequency very well controlled metrology. In this metrological context, the various principles and materials such as GaAs or Silicon pump or the superconducting turnstile have shown great progress. Although the generated level of currents are always higher and accurate, the requirements for the metrology are difficult to meet and for now no electron pump can be used for the realisation of the future quantum ampere that will probably be defined in a few years.Moreover, researchers have created circuits involving transistors FETs (field effect transistors) and transistors SETs (single-electron transistors), particularly to the purpose of a low consumption electronic.This thesis makes a further contribution in both areas: a new silicon electron pump was developed and co-integration of conventional CMOS circuit with a quantum nanoelectronics device was demonstrated.Our electron pump is based on the principle of two tuneable tunnel barriers and a central island. Through the modulation of the barriers at the frequency f, the electrostatic charge of the central island is controlled, a direct current I = ef is generated; and this even with a zero voltage bias across the pump. Our electron pumps use the nanowire technology silicon-on-insulator developed by CEA-LETI. The nanowire is covered with two gates (two MOSFETs in series) as adjustable barriers, and a small metallic Coulomb island is "isolated" between these two transistors. Our samples at 100mK demonstrated that we were able to control the quantum island charge state adiabatically and generated quantified currents up to 900MHz. We also produced the first electron pumps only achieved by optical lithography, with a maximum pumping frequency of 300MHz.Our large scale SETs manufacturing technology is based on the extreme size shrinking. These techniques have rarely been coupled with conventional CMOS circuits, when operating at low temperature. The interest of such co-integration is strong in the field of the quantum information: the establishment of many coupled qubits may require "additionnal" circuits made with classic CMOS but in cryogenic environnement.We designed and fabricated with the LETI-DACLE a co-integration of an oscillating circuit composed of large FETs circuit and a circuit made of nanoscopic SETs. A test circuit comprising an electron pump driven on chip by an oscillating circuit was created and measured at low temperature.Our results show that the oscillating circuit based on ring oscillators for 300K applications remain functional up to 1K, despite a very slight decay in the oscillation frequency. In parallel, by measuring a rectification current on the nanoscale device we demonstrated that cohabitation between FET circuit and SET was realistic and makes possible to imagine a complex circuit to achieve an electron pump and its electronic embedded on a single chip.The electron pump design by the approach of SOI technology has demonstrated its viability, potentially our devices are equivalent versus the best pumps created so far. The advantage of silicon and modern manufacturing techniques have proved that was possible to create complex circuits combining FET and SET for applications involving quantum phenomena. This work shows the promising nature of the co-integration circuits and opens the way for further investigation in the implementation of silicon electron pumps
Transistor balistique quantique et HEMT bas-bruit pour la cryoélectronique inférieure à 4.2 K by Emile Grémion( Book )

1 edition published in 2008 in French and held by 1 WorldCat member library worldwide

HEMTs cryogéniques à faible puissance dissipée et à bas bruit by Quan Dong( )

1 edition published in 2013 in French and held by 1 WorldCat member library worldwide

Transistors with low noise level at low frequency, low-power dissipation and operating at low temperature (≤ 4.2 K) are currently non-existent, however, they are widely required for realizing cryogenic preamplifiers which can be installed close to sensors or devices at a temperature of few tens of mK, in astrophysics, mesoscopic physics and space electronics. Research conducted over many years at LPN aims to a new generation of high-performance cryogenic HEMTs (High Electron Mobility Transistors) to meet these needs. This thesis, through the collaboration between the CNRS/LPN and the CEA/IRFU, aims for the realization of cryogenic preamplifiers for microcalorimeters at 50 mK.The work of this thesis consists of systematic characterizations of electrical and noise parameters of the HEMTs (fabricated at LPN) at low temperatures. Based on the experimental results, one of the low-frequency-noise sources in the HEMTs has been identified, i.e., the sequential tunneling part in the gate leakage current. Thanks to this result, heterostructures have been optimized to minimize the gate leakage current and the low frequency noise. During this thesis, specific methods have been developed to measure very low-gate-leakage-current values, transistor's capacitances and the 1/f noise with a very high input impedance. Two experimental relationships have been observed, one for the 1/f noise and other for the white noise in these HEMTs at 4.2 K. Significant advances have been made, for information, the HEMTs with a gate capacitance of 92 pF and a consumption of 100 µW can reach a noise voltage of 6.3 nV/√ Hz at 1 Hz, a white noise voltage of 0.2 nV/√ Hz, and a noise current of 50 aA/√Hz at 10 Hz. Finally, a series of 400 HEMTs has been realized which fully meet the specifications required for realizing preamplifiers at CEA/IRFU. The results of this thesis will provide a solid base for a better understanding of 1/f noise and white noise in cryogenic HEMTs with the objective to improve them for various considered applications
 
Audience Level
0
Audience Level
1
  General Special  
Audience level: 0.95 (from 0.90 for Transistor ... to 0.99 for HEMTs cryo ...)

Alternative Names
金庸

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