WorldCat Identities

森山工

Overview
Works: 14 works in 19 publications in 2 languages and 29 library holdings
Roles: Author
Publication Timeline
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Most widely held works by 森山工
Zoyoron : Hoka nihen by Marcel Mauss( Book )

2 editions published in 2014 in Japanese and held by 5 WorldCat member libraries worldwide

Madagasukaru o shiru tame no rokujūnishō( Book )

2 editions published in 2013 in Japanese and held by 4 WorldCat member libraries worldwide

Haka o ikiru hitobito( Book )

2 editions published in 1996 in Japanese and held by 4 WorldCat member libraries worldwide

Dojidai sekai no jinruigaku by Marc Augé( Book )

2 editions published in 2002 in Japanese and held by 3 WorldCat member libraries worldwide

Kokuminron : hoka nihen by Marcel Mauss( Book )

2 editions published in 2018 in Japanese and held by 3 WorldCat member libraries worldwide

Fīrudowākāzu handobukku( Book )

1 edition published in 2011 in Japanese and held by 2 WorldCat member libraries worldwide

Misaucha madakasukaru by Junko Satō( Book )

1 edition published in 2004 in Japanese and held by 1 WorldCat member library worldwide

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

ABSTRACT: It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO 's. However, driving forces that migrate VO 's are not elucidated yet. Considering an experimental fact that good data endurance more than 10 6 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching. In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, t rise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM
Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

ABSTRACT: For practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM
Madagasukarugo bunpō( Book )

1 edition published in 2003 in Japanese and held by 1 WorldCat member library worldwide

Role of Anode on Resistance Switching Phenomenon of Metal Oxide Resistive Random Access Memory( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Madagasukarugo goishū( Book )

1 edition published in 2004 in Japanese and held by 1 WorldCat member library worldwide

Madagasukarugo bunpō by Takumi Moriyama( Book )

1 edition published in 2003 in Japanese and held by 1 WorldCat member library worldwide

Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film( )

1 edition published in 2017 in English and held by 1 WorldCat member library worldwide

ABSTRACT: Practical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have proposed a grain surface tiling model, in which grain surfaces (i.e. grain boundaries) are composed by insulating and conductive micro surface structures. This paper reports the adequacy of our model to the NiO based ReRAM and universality of surface electronic properties in metal oxides of NiO, CoO and MgO. Experimental results of RS operating modes suggest that the resistance changes in the grain boundaries, supporting our model. First-principles calculation results suggest that our model can be adopted to other metal oxide materials and the RS from a low resistance to a high resistance can be caused at 1000 K, which agrees with previous experimental reports
 
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Audience level: 0.90 (from 0.85 for Madagasuka ... to 0.98 for Misaucha m ...)

Alternative Names
Moriyama, Takumi

Moriyama, Takumi 1961-

Takumi Moriyama

Морияма, Такуми

モリヤマ, タクミ

モリヤマ, タクミ 1961-

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