WorldCat Identities

Palisaitis, Justinas

Works: 52 works in 54 publications in 1 language and 57 library holdings
Roles: Author, Other
Publication Timeline
Most widely held works by Justinas Palisaitis
<> by Mariya Ivanova( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Large uniaxial magnetostriction with sign inversion at the first order phase transition in the nanolaminated Mn2GaC MAX phase by Iuliia P Novoselova( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Valence electron energy loss spectroscopy of III-nitride semiconductors by Justinas Pališaitis( Book )

2 editions published in 2012 in English and held by 2 WorldCat member libraries worldwide

Single Cr atom catalytic growth of graphene by Huy Q Ta( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Electron Energy Loss Spectroscopy of III-Nitride Semiconductors by Justinas Palisaitis( Book )

2 editions published in 2011 in English and held by 2 WorldCat member libraries worldwide

Effect of strain on low-loss electron energy loss spectra of group III-nitrides by Justinas Palisaitis( )

1 edition published in 2011 in English and held by 1 WorldCat member library worldwide

Low-loss EELS was used to acquire information about the strain state in group III-nitrides. Experimental and theoretical simulation results show that the bulk plasmon peak position varies near linearly with unit cell volume variations due to strain. A unit cell volume change of 1% results in a bulk plasmon peak shift of 0.159 eV, 0.168 eV, and 0.079 eV for AlN, GaN, and InN, respectively, according to simulations. The AlN peak shift was experimentally corroborated with a peak shift of 0.156 eV, where the applied strain caused a 1% volume change. It is also found that while the bulk plasmon energy can be used as a measure of the composition in a III-nitride alloy for relaxed structures, the presence of strain significantly affects such a measurement. The strain has a lower impact on the peak shift for Al (1-x) In x N (3% compositional error per 1 % volume change) and In (1-x) Ga x N alloys compared to significant variations for Al (1-x) Ga x N (16% compositional error for 1% volume change). Hence low-loss studies off III-nitrides, particularly for confined structures, must be undertaken with care and understanding
In0.5Ga0.5N layers by atomic layer deposition by Polla Rouf( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

We present an ALD approach to metastable In1-xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap value of 1.94 eV was achieved on a Si(100) substrate. Epitaxial In1-xGaxN(0002) was successfully grown directly on the 4H-SiC(0001) substrate
Improved oxidation properties from a reduced B content in sputter-deposited TiBx thin films by Jimmy Thörnberg( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

Transition-metal diboride thin films, which have high melting points, excellent hardness, and good chemical and thermal conductivity, severely suffer from rapid oxidation in air. Here, we explore the influence of varying B content and resulting nanostructure change on the oxidation properties of TiBx thin films, with x = 1.43, 2.20, and 2.70. Results show that all as-deposited layers have columnar structure. The column boundaries of asdeposited TiB2.20 and TiB2.20 films grown by direct current magnetron sputtering (DCMS) are B-rich, while the as-deposited TiB1.43 films grown by high-power impulse magnetron sputtering (HiPIMS) show no apparent grain boundary phases and contain Ti-rich planar defects. The oxidation rate of TiBL43 air-annealed at 400 degrees C up to 48 h is significantly lower than that of TiB2.20 and TiB2.20 films. The oxidation rate of TiB1.43, TiB2.20, and TiB2.20 films was measured at 2.9 +/- 1.5, 7.1 +/- 1.0, and 20.0 +/- 5.0 nm/h, respectively, with no spallation of even as thick oxide scales as 0.5 mu m in any of the films. The improved oxidation resistance can be explained by the absence of B-rich tissue phase at the column boundaries of understoichiometric TiBx films, a phase that interlaces the nanocolumnar TiB2 structures in the corresponding overstoichiometric films. An easy oxidation pathway is thus eliminated
Nucleation and core-shell formation mechanism of self-induced In x Al 1−x N core-shell nanorods grown on sapphire substrates by magnetron sputter epitaxy by Xiao Xiao Mao( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

Nucleation of self-induced nanorod and core-shell structure formation by surface-induced phase separation have been studied at the initial growth stage. The growth of well-separated core shell nanorods is only found in a transition temperature region (600 degrees C amp;lt;= T amp;lt;= 800 degrees C) in contrast to the result of thin film growth outside this region (T amp;lt; 600 degrees C or T amp;gt; 800 degrees C). Formation of multiple compositional domains, due to phase separation, after similar to 20 nm InxAl1-xN epilayer growth from sapphire substrate promotes the core-shell nanorod growth, showing a modified Stranski-Krastanov growth mode. The use of VN seed layer makes the initial growth of the nanorods directly at the substrate interface, revealing a Volmer-Weber growth mode. Different compositional domains are found on VN template surface to support that the phase separation takes place at the initial nucleation process and forms by a self-patterning effect. The nanorods were grown from In-rich domains and initiated the formation of core-shell nanorods due to spinodal decomposition of the InxAl1-xN alloy with a composition in the miscibility gap
Synthesis and characterisation of nanocomposite Mo-Fe-B thin films deposited by magnetron sputtering by Paulius Malinovskis( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

Several ternary phases are known in the Mo-Fe-B system. Previous ab initio calculations have predicted that they should exhibit a tempting mix of mechanical and magnetic properties. In this study, we have deposited Mo-Fe-B films with a Fe-content varying from 0-37 at.% using non-reactive DC (direct current) magnetron sputtering. The phase composition, microstructure, and mechanical properties were investigated using X-ray diffraction, scanning transmission electron microscopy, and nanoindentation measurements. Films deposited at 300 degrees C and with >7 at.% Fe are nanocomposites consisting of two amorphous phases: a metal-rich phase and a metal-deficient phase. Hardness and elastic modulus were reduced with increasing Fe-content from similar to 29 to similar to 19 GPa and similar to 526 to similar to 353 GPa, respectively. These values result in H-3/E-2 ratios of 0.089-0.052 GPa, thereby indicating brittle behaviour of the films. Also, no indication of crystalline ternary phases was observed at temperatures up to 600 degrees C, suggesting that higher temperatures are required for such films to form
Where is the unpaired transition metal in substoichiometric diboride line compounds? by Justinas Palisaitis( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

The atomic structure and local composition of high quality epitaxial substoichiometric titanium diboride (TiB1.9) thin film, deposited by unbalanced magnetron sputtering, were studied using analytical high-resolution scanning transmission electron microscopy, density functional theory, and image simulations. The unpaired Ti is pinpointed to inclusion of Ti-based stacking faults within a few atomic layers, which terminates the {1 (1) over bar 00} prismatic planes of the crystal structure and attributed to the absence of B between Ti planes that locally relaxes the structure. This mechanism allows the line compound to accommodate off-stoichiometry and remain a line compound between defects. The planar defects are embedded in otherwise stoichiometric TiB2 and are delineated by insertion of dislocations. An accompanied decrease in Ti-Ti bond lengths along and across the faults is observed. (c) 2020ActaMaterialiaInc. PublishedbyElsevierLtd. This is an open access article under the CC BY license (
Plasma CVD of B-C-N thin films using triethylboron in argon-nitrogen plasma by Laurent Souqui( )

1 edition published in 2020 in English and held by 1 WorldCat member library worldwide

Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-kappa) materials for future electronic devices. Such applications require deposition at temperatures below 300 degrees C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B-N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)(3)), a precursor with B-C bonds, in an argon-nitrogen plasma. From quantitative analysis with time-of-flight elastic recoil detection analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.9-1.3 and B/C ratios between 3.4-8.6 and where the films contain from 3.6 to 7.8 at% H and from 6.6 to 20 at% O. The films have low density, from 0.32 to 1.6 g cm( -3) as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scanning transmission electron microscopy shows that C and BN do not phase-separate in the film. The static dielectric constant kappa, measured by capacitance-voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition
Ab initio calculations and experimental study of piezoelectric Y x In 1-x N thin films deposited using reactive magnetron sputter epitaxy by Christopher Tholander( )

1 edition published in 2016 in English and held by 1 WorldCat member library worldwide

By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (Y x In 1-x N). Ab initio calculations show that the Y x In 1-x N wurtzite phase is lowest in energy among relevant alloy structures for 0≤x≤0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown Y x In 1-x N films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1âxN to have comparable piezoelectric properties to Sc x Al 1-x N
Synthesis of (V2/3Sc1/3)(2)AlC i-MAX phase and V2-xC MXene scrolls by Jimmy Thörnberg( )

1 edition published in 2019 in English and held by 1 WorldCat member library worldwide

We report the synthesis and characterization of a new laminated i-MAX phase, (V2/3Sc1/3)(2)AlC, with in-plane chemical ordering between the M-elements. We also present evidence for the solid solution (V2-xScx)(2)AlC, where x amp;lt;= 0.05. Chemical etching of the Al and Sc results in a two-dimensional (2D) MXene counterpart: V2-xC from the latter phase. Furthermore, etching with HF yields single-sheet MXene of flat morphology, while LiF + HCl gives MXene scrolls. We also show a 4x reduction in etching time for (V2-xScx)(2)AlC compared to V2AlC, suggesting that traces of Sc changes the phase stability, and make the material more susceptible to etching. The results show a path for improved control of MXene synthesis and morphology, which may be applicable also for other MAX/MXene systems
Tailored synthesis approach of (Mo2/3Y1/3)(2)AlC i-MAX and its two-dimensional derivative Mo1.33CTz MXene: enhancing the yield, quality, and performance in supercapacitor applications by Joseph Halim( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)(2)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)(2)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)(2)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm(-3)) and gravimetric (436 F g(-1)) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications
Standard-free composition measurements of Al x In 1- x N by low-loss electron energy loss spectroscopy by Justinas Palisaitis( )

1 edition published in 2011 in English and held by 1 WorldCat member library worldwide

We demonstrate a standard-free method to retrieve compositional information in Al x In 1- x N thin films by measuring the bulk plasmon energy (E p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full com- positional range 0 d"x d"1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X-ray diffraction (XRD). It is shown that E p follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis
Y x Al 1-x N Thin Films by Agnė Žukauskaitė( )

1 edition published in 2012 in English and held by 1 WorldCat member library worldwide

Reactive magnetron sputtering was used to deposit YxAl1-xN thin films, 0≤x≤0.22, onto Al2O3(0001) and Si(100) substrates. X-ray diffraction and analytical electron microscopy show that the films are solid solutions. Lattice constants are increasing with Y concentration, in agreement with ab initio calculations. Spectroscopic ellipsometry measurements reveal a band gap decrease from 6.2 eV (x=0) down to 4.9 eV (x=0.22). Theoretical investigations within the special quasirandom structure approach show that the wurtzite structure has the lowest mixingenthalpy for 0≤x≤0.75
Exploring MXenes and their MAX phase precursors by electron microscopy by Hatim Alnoor( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

This review celebrates the width and depth of electron microscopy methods and how these have enabled massive research efforts on MXenes. MXenes constitute a powerful recent addition to 2-dimensional materials, derived from their parent family of nanolaminated materials known as MAX phases. Owing to their rich chemistry, MXenes exhibit properties that have revolutionized ranges of applications, including energy storage, electromagnetic interference shielding, water filtering, sensors, and catalysis. Few other methods have been more essential in MXene research and development of corresponding applications, compared with electron microscopy, which enables structural and chemical identification at the atomic scale. In the following, the electron microscopy methods that have been applied to MXene and MAX phase precursor research are presented together with research examples and are discussed with respect to advantages and challenges. (C) 2020 The Author(s). Published by Elsevier Ltd
Effect of low-energy ion assistance on the properties of sputtered ZrB2 films by Claudia Schnitter( )

1 edition published in 2022 in English and held by 1 WorldCat member library worldwide

Zirconium diboride (ZrB2) films have been deposited by direct current magnetron sputtering (DCMS) from a ZrB2 compound target on Al2O3 (0001) substrates held at 600, 700, 800, and 900 degrees C, and with two different axial magnetic field strengths, 34 and 104 G, generated using a coil surrounding the substrate. Plasma probe measurements show an increase of the ion fluxes on floating-potential substrates of the two different configurations by a factor of 2.8 for 104 G compared to 34 G, while the ion energy remained relatively constant at approximate to 12 eV. Time-of-flight elastic recoil detection analysis (ToF-ERDA) show that films deposited with a magnetic field of 34 G are highly overstoichiometric with B/Zr ratios approximate to 2.4, while films deposited with 104 G exhibit a B/Zr ratios approximate to 2.1. The levels of oxygen and carbon in the films are below 1 at. % irrespective of growth conditions. X-ray diffraction (XRD) 0/20 scans, complemented by pole figure measurements, reveal that all deposited films are 0001-oriented. XRD 0/20 scans of the 000t peak intensities and co (rocking-curve) widths show increased ZrB2 crystal quality with increasing temperature for both magnetic field strengths. Minimum electrical resistivity of approximate to 100 p omega cm is achieved for an axial magnetic field of 104 G, independent of temperature
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Alternative Names
Justinas Palisaitis researcher

Justinas Palisaitis wetenschapper

English (22)