WorldCat Identities

Persson, Per O A.

Works: 74 works in 76 publications in 1 language and 79 library holdings
Roles: Author, Other
Classifications: Q180.S93, 530.414
Publication Timeline
Most widely held works by Per O A Persson
Characterization of process-related defects in silicon carbide by electron microscopy by Per O. Å Persson( Book )

3 editions published in 2001 in English and held by 4 WorldCat member libraries worldwide

Single Cr atom catalytic growth of graphene by Huy Q Ta( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

Correlative theoretical and experimental investigation of the formation of AlYB14 and competing phases by Oliver Hunold( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Improved oxidation properties from a reduced B content in sputter-deposited TiBx thin films by Jimmy Thörnberg( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

Transition-metal diboride thin films, which have high melting points, excellent hardness, and good chemical and thermal conductivity, severely suffer from rapid oxidation in air. Here, we explore the influence of varying B content and resulting nanostructure change on the oxidation properties of TiBx thin films, with x = 1.43, 2.20, and 2.70. Results show that all as-deposited layers have columnar structure. The column boundaries of asdeposited TiB2.20 and TiB2.20 films grown by direct current magnetron sputtering (DCMS) are B-rich, while the as-deposited TiB1.43 films grown by high-power impulse magnetron sputtering (HiPIMS) show no apparent grain boundary phases and contain Ti-rich planar defects. The oxidation rate of TiBL43 air-annealed at 400 degrees C up to 48 h is significantly lower than that of TiB2.20 and TiB2.20 films. The oxidation rate of TiB1.43, TiB2.20, and TiB2.20 films was measured at 2.9 +/- 1.5, 7.1 +/- 1.0, and 20.0 +/- 5.0 nm/h, respectively, with no spallation of even as thick oxide scales as 0.5 mu m in any of the films. The improved oxidation resistance can be explained by the absence of B-rich tissue phase at the column boundaries of understoichiometric TiBx films, a phase that interlaces the nanocolumnar TiB2 structures in the corresponding overstoichiometric films. An easy oxidation pathway is thus eliminated
Phase stability of Crn+1GaCn MAX phases from first principles and Cr2GaC thin-film synthesis using magnetron sputtering from elemental targets by Andrejs Petruhins( )

1 edition published in 2013 in English and held by 1 WorldCat member library worldwide

Ab-initio calculations have been used to investigate the phase stability and magnetic state of Crn+ 1GaCn MAX phase. Cr2GaC (n = 1) was predicted to be stable, with a ground state corresponding to an antiferromagnetic spin configuration. Thin-film synthesis by magnetron sputtering from elemental targets, including liquid Ga, shows the formation of Cr2GaC, previously only attained from bulk synthesis methods. The films were deposited at 650 degrees C on MgO(111) substrates. X-ray diffraction and high-resolution transmission electron microscopy show epitaxial growth of (000) MAX phase
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC by Hengfang Zhang( )

1 edition published in 2022 in English and held by 1 WorldCat member library worldwide

We investigate the interfaces and polarity domains at the atomic scale in epitaxial AlN and GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC. X-ray diffraction, potassium hydroxide (KOH) wet chemical etching, and scanning transmission electron microscopy combined provide an in-depth understanding of polarity evolution with the film thickness, which is crucial to optimize growth. The AlN grown in a 3D mode is found to exhibit N-polar pyramid-type structures at the AlN-SiC interface. However, a mixed N-polar and Al-polar region with Al-polarity domination along with inverted pyramid-type structures evolve with increasing film thickness. We identify inclined inversion domain boundaries and propose that incorporation of oxygen on the & lang;40-41 & rang; facets of the N-polar pyramids causes the polarity inversion. We find that mixed-polar AlN is common and easily etched and remains undetected by solely relying on KOH etching. Atomic scale electron microscopy is, therefore, needed to accurately determine the polarity. The polarity of GaN grown on mixed-polar AlN is further shown to undergo complex evolution with the film thickness, which is discussed in the light of growth mechanisms and polarity determination methods
Where is the unpaired transition metal in substoichiometric diboride line compounds? by Justinas Palisaitis( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

The atomic structure and local composition of high quality epitaxial substoichiometric titanium diboride (TiB1.9) thin film, deposited by unbalanced magnetron sputtering, were studied using analytical high-resolution scanning transmission electron microscopy, density functional theory, and image simulations. The unpaired Ti is pinpointed to inclusion of Ti-based stacking faults within a few atomic layers, which terminates the {1 (1) over bar 00} prismatic planes of the crystal structure and attributed to the absence of B between Ti planes that locally relaxes the structure. This mechanism allows the line compound to accommodate off-stoichiometry and remain a line compound between defects. The planar defects are embedded in otherwise stoichiometric TiB2 and are delineated by insertion of dislocations. An accompanied decrease in Ti-Ti bond lengths along and across the faults is observed. (c) 2020ActaMaterialiaInc. PublishedbyElsevierLtd. This is an open access article under the CC BY license (
Electron-phonon coupling and quantum correction to topological magnetoconductivity in Bi 2 GeTe 4 by Niraj Kumar Singh( )

1 edition published in 2022 in English and held by 1 WorldCat member library worldwide

Effect of strain on low-loss electron energy loss spectra of group III-nitrides by Justinas Palisaitis( )

1 edition published in 2011 in English and held by 1 WorldCat member library worldwide

Low-loss EELS was used to acquire information about the strain state in group III-nitrides. Experimental and theoretical simulation results show that the bulk plasmon peak position varies near linearly with unit cell volume variations due to strain. A unit cell volume change of 1% results in a bulk plasmon peak shift of 0.159 eV, 0.168 eV, and 0.079 eV for AlN, GaN, and InN, respectively, according to simulations. The AlN peak shift was experimentally corroborated with a peak shift of 0.156 eV, where the applied strain caused a 1% volume change. It is also found that while the bulk plasmon energy can be used as a measure of the composition in a III-nitride alloy for relaxed structures, the presence of strain significantly affects such a measurement. The strain has a lower impact on the peak shift for Al (1-x) In x N (3% compositional error per 1 % volume change) and In (1-x) Ga x N alloys compared to significant variations for Al (1-x) Ga x N (16% compositional error for 1% volume change). Hence low-loss studies off III-nitrides, particularly for confined structures, must be undertaken with care and understanding
Deposition of MAX phase-containing thin films from a (Ti,Zr)(2)AlC compound target by Clio Azina( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

This work reports on sputter depositions carried out from a compound (Ti,Zr)(2)AlC target on Al2O3(0 0 0 1) substrates at temperatures ranging between 500 and 900 degrees C. Short deposition times yielded 30-40 nm-thick Al-containing (Ti,Zr)C films, whereas longer depositions yielded thicker films up to 90 nm which contained (Ti,Zr)C and intermetallics. At 900 degrees C, the longer depositions led to films that also consisted of solid solution MAX phases. Detailed transmission electron microscopy showed that both (Ti,Zr)(2)AlC and (Ti,Zr)(3)AlC2 solid solution MAX phases were formed. Moreover, this work discusses the growth mechanism of the thicker films, which started with the formation of the mixed (Ti,Zr)C carbide, followed by the nucleation and growth of aluminides, eventually leading to solid state diffusion of Al within the carbide, at the highest temperature (900 degrees C) to form the MAX phases
Exploring MXenes and their MAX phase precursors by electron microscopy by Hatim Alnoor( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

This review celebrates the width and depth of electron microscopy methods and how these have enabled massive research efforts on MXenes. MXenes constitute a powerful recent addition to 2-dimensional materials, derived from their parent family of nanolaminated materials known as MAX phases. Owing to their rich chemistry, MXenes exhibit properties that have revolutionized ranges of applications, including energy storage, electromagnetic interference shielding, water filtering, sensors, and catalysis. Few other methods have been more essential in MXene research and development of corresponding applications, compared with electron microscopy, which enables structural and chemical identification at the atomic scale. In the following, the electron microscopy methods that have been applied to MXene and MAX phase precursor research are presented together with research examples and are discussed with respect to advantages and challenges. (C) 2020 The Author(s). Published by Elsevier Ltd
Current state of the art on tailoring the MXene composition, structure, and surface chemistry by Per O A Persson( )

1 edition published in 2019 in English and held by 1 WorldCat member library worldwide

MXenes constitute a family of two-dimensional transition metal carbides, carbonitrides and nitrides. Discovered in 2011, the number of MXenes has expanded significantly and more than 20 different MXenes have been synthesized, with many more predicted from theoretical calculations. MXenes constitute an exceptional family of materials based on their availability for elemental alloying and control of surface terminations, which enables synthesis of a range of structures and chemistries. Consequently, the MXenes exhibit an unparalleled potential for tuning of the materials properties for a wide range of applications. At present, MXenes have emerged with astonishing electronic, optical, plasmonic and thermoelectric properties. This has resulted in a global surge of research around a wide variety of applications, including but not limited to energy storage, carbon capture, electromagnetic interference shielding, reinforcement for composites, water filtering, sensors, and photo-, electro- and chemical catalysis etc. In this review, we present the available state of the art tailoring of the MXene properties owing to recent advances in structural ordering and tuning of surface terminations
Electronic and optical characterization of 2D Ti2C and Nb2C (MXene) thin films by Joseph Halim( )

1 edition published in 2019 in English and held by 1 WorldCat member library worldwide

Two-dimensional (2D) transition metal carbides and/or nitrides (MXenes) are a new class of 2D materials, with extensive opportunities for property tailoring due to the numerous possibilities for varying chemistries and surface terminations. Here, Ti2AlC and Nb2AlC MAX phase epitaxial thin films were deposited on sapphire substrates by physical vapor deposition. The films were then etched in LiF/HCl solutions, yielding Li-intercalated, 2D Ti2CTz and Nb2CTz films, whose terminations, transport and optical properties were characterized. The former exhibits metallic conductivity, with weak localization below 50 K. In contrast, the Nb-based film exhibits an increase in resistivity with decreasing temperature from RT down to 40K consistent with variable range hopping transport. The optical properties of both films were determined from spectroscopic ellipsometry in the 0.75 to 3.50 eV range. The results for Ti2Clz films confirm the metallic behavior. In contrast, no evidence of metallic behavior is observed for the Nb2CT(z) film. The present work therefore demonstrates that one fruitful approach to alter the electronic and optical properties of MXenes is to change the nature of the transition metal
Halogenated Ti3C2 MXenes with Electrochemically Active Terminals for High-Performance Zinc Ion Batteries by Mian Li( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

The class of two-dimensional metal carbides and nitrides known as MXenes offer a distinct manner of property tailoring for a wide range of applications. The ability to tune the surface chemistry for expanding the property space of MXenes is thus an important topic, although experimental exploration of surface terminals remains a challenge. Here, we synthesized Ti3C2 MXene with unitary, binary, and ternary halogen terminals, e.g., -Cl, -Br, -I, -BrI, and -ClBrI, to investigate the effect of surface chemistry on the properties of MXenes. The electrochemical activity of Br and I elements results in the extraordinary electrochemical performance of the MXenes as cathodes for aqueous zinc ion batteries. The -Br- and -I-containing MXenes, e.g., Ti3C2Br2 and Ti3C2I2, exhibit distinct discharge platforms with considerable capacities of 97.6 and 135 mA.g(-1). Ti3C2 (BrI) and Ti3C2 (ClBrI) exhibit dual discharge platforms with capacities of 117.2 and 106.7 mAh.g(-1). In contrast, the previously discovered MXenes Ti3C2Cl2 and Ti3C2 (OF) exhibit no discharge platforms and only similar to 50% of capacities and energy densities of Ti3C2Br2. These results emphasize the effectiveness of the Lewis-acidic-melt etching route for tuning the surface chemistry of MXenes and also show promise for expanding the MXene family toward various applications
X-ray Photoelectron Spectroscopy of Ti3AlC2, Ti3C2Tz, and TiC Provides Evidence for the Electrostatic Interaction between Laminated Layers in MAX-Phase Materials by Lars-Åke Näslund( )

1 edition published in 2020 in English and held by 1 WorldCat member library worldwide

The inherently nanolaminated Ti3AlC2 is one of the most studied MAX-phase materials. MAX-phases consists of two-dimensional Mn+1Xn-layers (e.g., T3C2-layers) with strong internal covalent bonds separated by weakly interacting A-layers (e.g., Al-layers), where the repetitive stacking of the Mn+1Xn-layers and the A-layers suggests being the foundation for the unusual but attractive material properties of the MAX-phases. Although being an important parameter, the nature of the bonding between the Mn+1Xn-layers and the A-layers has not yet been established in detail. The X-ray photoelectron spectroscopy data presented in this paper suggest that the weak interaction between the Ti3C2-layers and the Al-layers in Ti3AlC2 is through electrostatic attraction facilitated by a charge redistribution of the delocalized electrons from the Ti3C2-layers to the Al-layers. This charge redistribution is of the same size and direction as between Ti atoms and Al atoms in TiAl alloy. This finding opens up a pathway to predict and improve MAX-phase materials properties through A-layer alloying, as well as to predict new and practically feasible MXene compounds
Colorless-to-colorful switching of electrochromic MXene by reversible ion insertion by Jianxia Jiang( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

Electrochromic (EC) materials that change color with voltage have been widely studied for use in dynamic windows. However, colorless-to-colorful switching with high contrast ratio is generically unattainable, especially for colorless-to-black electrochromic materials with an ultrahigh contrast ratio over the entire visible region. In this work, we developed Nb1.33C MXene-based dynamic windows with colorless-to-black switching of up to 75% reversible change in transmittance from 300 to 1,500 nm. By exploring the electrochromic effects of different electrolytes through in situ optical changes and electrochemical quartz crystal microbalance (EQCM), it is found that electrochromic behavior is greatly influenced by the extent of reversible Li+ insertion/deinsertion between the two-dimensional Nb1.33C MXene nanosheets. In addition, a colorless-to-black EC device based on Nb1.33C with an overall integrated contrast ratio over 80% was successfully constructed by a solution-processable spin coating method. This work enables a simple route to fabricate MXene-based high-performance electrochromic smart windows, which is important for further expanding the application of MXenes to optoelectronic and photonic applications
Synthesis of (V2/3Sc1/3)(2)AlC i-MAX phase and V2-xC MXene scrolls by Jimmy Thörnberg( )

1 edition published in 2019 in English and held by 1 WorldCat member library worldwide

We report the synthesis and characterization of a new laminated i-MAX phase, (V2/3Sc1/3)(2)AlC, with in-plane chemical ordering between the M-elements. We also present evidence for the solid solution (V2-xScx)(2)AlC, where x amp;lt;= 0.05. Chemical etching of the Al and Sc results in a two-dimensional (2D) MXene counterpart: V2-xC from the latter phase. Furthermore, etching with HF yields single-sheet MXene of flat morphology, while LiF + HCl gives MXene scrolls. We also show a 4x reduction in etching time for (V2-xScx)(2)AlC compared to V2AlC, suggesting that traces of Sc changes the phase stability, and make the material more susceptible to etching. The results show a path for improved control of MXene synthesis and morphology, which may be applicable also for other MAX/MXene systems
Structural and magnetic properties of (Cr1-xMnx)(5)Al-8 solid solution and structural relation to hexagonal nanolaminates by Aurelija Mockuté( )

1 edition published in 2014 in English and held by 1 WorldCat member library worldwide

Electron microscopy is used to reveal the competitive epitaxial growth of bcc structure (Cr1-x Mn (x))(5)Al-8 and (Cr1-y Mn (y))(2)AlC [M (n+1)AX (n) (MAX)] phase during both magnetron sputtering and arc deposition. X-ray diffraction theta-2 theta measurements display identical peak positions of (000n)-oriented MAX phase and (Cr1-x Mn (x))(5)Al-8, due to the interplanar spacing of (Cr1-x Mn (x))(5)Al-8 that matches exactly half a unit cell of (Cr1-y Mn (y))(2)AlC. Vibrating sample magnetometry shows that a thin film exclusively consisting of (Cr1-x Mn (x))(5)Al-8 exhibits a magnetic response, implying that the potential presence of this phase needs to be taken into consideration when evaluating the magnetic properties of (Cr, Mn)(2)AlC
Material proposal for 2D indium oxide by Anelia Kakanakova-Gueorguieva( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in "atop" positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO
Tailored synthesis approach of (Mo2/3Y1/3)(2)AlC i-MAX and its two-dimensional derivative Mo1.33CTz MXene: enhancing the yield, quality, and performance in supercapacitor applications by Joseph Halim( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)(2)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)(2)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)(2)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm(-3)) and gravimetric (436 F g(-1)) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications
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English (22)