WorldCat Identities

Hultman, Lars

Works: 251 works in 257 publications in 1 language and 267 library holdings
Genres: Academic theses 
Roles: Author, Other, Contributor, the, Editor, Dissertant, Thesis advisor
Publication Timeline
Most widely held works by Lars Hultman
Growth of Single and Polycrystalline TiN and ZrN Thin films by reactive Sputtering : influence of Low energy Ion Irradation by Lars Hultman( Book )

3 editions published in 1988 in English and held by 4 WorldCat member libraries worldwide

Dense Ti 0.67 Hf 0.33 B 1.7 thin films grown by hybrid HfB 2 -HiPIMS/TiB 2 -DCMS co-sputtering without external heating by Babak Bakhit( )

2 editions published in 2021 in English and held by 3 WorldCat member libraries worldwide

There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti 0.67 Hf 0.33 B 1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB 2 -HiPIMS/TiB 2 -DCMS) in pure Ar on Al 2 O 3 (0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf + ) irradiation promoting the growth of dense Ti 0.67 Hf 0.33 B 1.7
Tailoring of surface plasmon resonances in TiN/(Al0.72Sc0.28)N multilayers by dielectric layer thickness variation by Magnus Garbrecht( )

2 editions published between 2017 and 2018 in English and held by 3 WorldCat member libraries worldwide

Alternative designs of plasmonic metamaterials for applications in solar energy-harvesting devices are necessary due to pure noble metal-based nanostructures incompatibility with CMOS technology, limited thermal and chemical stability, and high losses in the visible spectrum. In the present study, we demonstrate the design of a material based on a multilayer architecture with systematically varying dielectric interlayer thicknesses that result in a continuous shift of surface plasmon energy. Plasmon resonance characteristics of metal/semiconductor TiN/(Al, Sc)N multilayer thin films with constant TiN and increasing (Al, Sc)N interlayer thicknesses were analyzed using aberration-corrected and monochromated scanning transmission electron microscopy-based electron energy loss spectroscopy (EELS). EEL spectrum images and line scans were systematically taken across layer interfaces and compared to spectra from the centers of the respective adjacent TiN layer. While a constant value for the TiN bulk plasmon resonance of about 2.50 eV was found, the surface plasmon resonance energy was detected to continuously decrease with increasing (Al, Sc)N interlayer thickness until 2.16 eV is reached. This effect can be understood to be the result of resonant coupling between the TiN bulk and surface plasmons across the dielectric interlayers at very low (Al, Sc)N thicknesses. That energy interval between bulk and decreasing surface plasmon resonances corresponds to wavelengths in the visible spectrum. This shows the potential of tailoring the materials plasmonic response by controlling the (Al, Sc)N interlayer thickness, making TiN-based multilayers good prospects for plasmonic metamaterials in energy devices
1st Northern Workshop on TEM Sample Preparation of Thin Films by Northern Workshop on TEM Sample Preparation of Thin Films( Book )

1 edition published in 1997 in English and held by 3 WorldCat member libraries worldwide

Microstructural evolution and thermal stability of HfN/ScN, ZrN/ScN, and Hf0.5Zr0.5N/ScN metal/semiconductor superlattices by Magnus Garbrecht( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Elastic properties and electrostructural correlations in ternary scandium-based cubic inverse perovskites a first-principles study by Maurizio Mattesini( )

2 editions published in 2009 in English and held by 2 WorldCat member libraries worldwide

We have performed ab initio calculations for the cubic inverse-perovskite Sc3EN E=Al, Ga, In systems tostudy their electronic band-structures and elastic properties. In this study, we used the accurate augmentedplane wave plus local orbital method to find the equilibrium structural parameters and to compute the fullelastic tensors. The obtained single-crystal elastic constants were used to quantify the stiffness of the Sc-basedternary nitrides and to appraise their mechanical stability. The site-projected density of states, Fermi surfaces, and the charge-density plots have also been used to analyze the chemical bonding between the Sc6N cluster andthe surrounding metallic lattice of either Al, Ga, or In atoms. Our calculations show that Sc3GaN has the largestcovalent Sc-N bonding-type character with the highest Young, shear, and bulk moduli. Compared with theother two isoelectronic systems, it also behaves as the most brittle material with a relatively large elasticanisotropy
Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth by Carl Junesand( )

1 edition published in 2012 in English and held by 2 WorldCat member libraries worldwide

Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers by Marlene Mühlbacher( )

1 edition published in 2018 in English and held by 2 WorldCat member libraries worldwide

Growth of single- and polycrystalline titanium nitride by reactive sputtering by Lars Hultman( Book )

1 edition published in 1986 in English and held by 2 WorldCat member libraries worldwide

Low-temperature growth of boron carbide coatings by direct current magnetron sputtering and high-power impulse magnetron sputtering by Susann Schmidt( )

1 edition published in 2016 in English and held by 2 WorldCat member libraries worldwide

Control over the Phase Formation in Metastable Transition Metal Nitride Thin Films by Tuning the Al+ Subplantation Depth by Grzegorz Greczynski( )

1 edition published in 2019 in English and held by 2 WorldCat member libraries worldwide

C1s Peak of Adventitious Carbon Aligns to the Vacuum Level: Dire Consequences for Materials Bonding Assignment by Photoelectron Spectroscopy by Grzegorz Greczynski( )

1 edition published in 2017 in English and held by 2 WorldCat member libraries worldwide

The C1s signal from ubiquitous carbon contamination on samples forming during air exposure, so called adventitious carbon (AdC) layers, is the most common binding energy (BE) reference in X-ray photoelectron spectroscopy studies. We demonstrate here, by using a series of transition-metal nitride films with different AdC coverage, that the BE of the C1s peak E-B(F) varies by as much as 1.44 eV. This is a factor of 10 more than the typical resolvable difference between two chemical states of the same element, which makes BE referencing against the C1s peak highly unreliable. Surprisingly, we find that C1s shifts correlate to changes in sample work function phi(SA), such that the sum E-B(F) + phi(SA) is constant at 289.50 +/- 0.15 eV, irrespective of materials system and air exposure time, indicating vacuum level alignment. This discovery allows for significantly better accuracy of chemical state determination than offered by the conventional methods. Our findings are not specific to nitrides and likely apply to all systems in which charge transfer at the AdC/substrate interface is negligible
Growth and characterization of epitaxial Ti 3 GeC 2 thin films on 4H-SiC(0001) by Kristina Buchholt( )

1 edition published in 2012 in English and held by 1 WorldCat member library worldwide

Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film
Photoluminescence study of basal plane stacking faults in ZnO nanowires by Volodymyr Khranovskyy( )

1 edition published in 2014 in English and held by 1 WorldCat member library worldwide

We have investigated the photoluminescence (PL) of ZnO nanowires (NWs) containing a high density (similar to 1 x 10(6) cm( -1)) of basal plane stacking faults (BSFs). It was observed that the BSFs result in a specific PL peak at similar to 3.329 eV along with a donor bound excitonic emission (D degrees X) peak at 5 K. The observed BSF-related emission is of excitonic type and possesses longer PL lifetime than D degrees X (similar to 360 ps vs. similar to 70 ps). Via comparison of the microstructural and the PL properties of the ZnO NWs, it is shown that the observed BSF-related emission is due to the formation of crystal phase quantum wells (QWs). This is explained by the fact that BSF in wurtzite (WZ) ZnO is the thinnest segment of zinc blende (ZB) phase ZnO inserted in the WZ matrix, resulting in band alignment of type II due to the conduction and valence band offsets of ZB with respect to WZ ZnO. The mechanism of the BSF related PL is suggested to be an indirect exciton transitions clue to the recombination of electrons confined in the ZB QWs to holes in the WZ barriers localized near the BSFs
CuO/ZnO Nanocorals synthesis via hydrothermal technique: growth mechanism and their application as Humidity Sensor by Ahmed Zainelabdin( )

1 edition published in 2012 in English and held by 1 WorldCat member library worldwide

We demonstrate hydrothermal synthesis of coral-like CuO nanostructures by selective growth on ZnO nanorods (NR) at low temperatures. During the hydrothermal processing the resultant hydroxylated and eroded surface of ZnO NR becomes favorable for the CuO nanostructures growth via oriented attachments. Heterojunction p-n diodes fabricated from the CuO/ZnO nanocorals (NC) reveal stable and high rectification diode properties with a turn-on voltage ~1.52 V and negligible reverse current. The humidity sensing characteristics of the CuO/ZnO NC diodes exhibit a remarkable linear (in a semilogarithmic scale) decrease in the DC resistance by more than three orders when the relative humidity is changed from 30 - 90 %. The NC humidity sensor is also found to reveal the highest sensitivity factor ~6045 among available data for the constituent material's and a response and recovery time of 6 s and 7 s, respectively
Atomic-Scale Tuning of Graphene/Cubic SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion by Hao Li( )

1 edition published in 2020 in English and held by 1 WorldCat member library worldwide

Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept study, the atomicscale-tuned Schottky junction is demonstrated to promote both the separation and transport of charge carriers in a typical photoelectrochemical system for solar-to-fuel conversion under low bias. Simultaneously, the as-grown monolayer graphene with an extremely high conductivity protects the surface of 3C-SiC from photocorrosion and energetically delivers charge carriers to the loaded cocatalyst, achieving a synergetic enhancement of the catalytic stability and efficiency
Where is the unpaired transition metal in substoichiometric diboride line compounds? by Justinas Palisaitis( )

1 edition published in 2021 in English and held by 1 WorldCat member library worldwide

The atomic structure and local composition of high quality epitaxial substoichiometric titanium diboride (TiB1.9) thin film, deposited by unbalanced magnetron sputtering, were studied using analytical high-resolution scanning transmission electron microscopy, density functional theory, and image simulations. The unpaired Ti is pinpointed to inclusion of Ti-based stacking faults within a few atomic layers, which terminates the {1 (1) over bar 00} prismatic planes of the crystal structure and attributed to the absence of B between Ti planes that locally relaxes the structure. This mechanism allows the line compound to accommodate off-stoichiometry and remain a line compound between defects. The planar defects are embedded in otherwise stoichiometric TiB2 and are delineated by insertion of dislocations. An accompanied decrease in Ti-Ti bond lengths along and across the faults is observed. (c) 2020ActaMaterialiaInc. PublishedbyElsevierLtd. This is an open access article under the CC BY license (
First-principles study of dislocations in hcp metals through the investigation of the (11(2)over-bar1) twin boundary by Nina J Lane( )

1 edition published in 2011 in English and held by 1 WorldCat member library worldwide

Herein, we use first principles calculations to study the energy of the (11 (2) over bar1) twin boundary in Zr, Zn, Mg, Ti, and Be. This boundary is important for understanding the microyielding and damping of hexagonal close-packed metals. The (11 (2) over bar1) twin boundary is unique in that it is composed of-and can form by the glide of-basal dislocations nucleating at every c lattice parameter. The effect of the number of atoms between boundaries on the boundary energy, and the resulting lattice strains of the relaxed structures are quantified. It is shown that the energies obtained converge within 32-64 atoms/supercell. The structures with a higher second-order elastic constant term, c(44), also have higher boundary energies. It is further shown that the critical resolved shear stresses of the basal dislocations at 0 K, which make up the (11 (2) over bar1) twin, are so low as to be below the threshold of the first principles calculations
Structure and bonding in amorphous iron carbide thin films( )

1 edition published in 2015 in English and held by 1 WorldCat member library worldwide

Direct current magnetron sputtered ZrB 2 thin films on 4H-SiC(0001) and Si(100) by Lina Tengdelius( )

1 edition published in 2014 in English and held by 1 WorldCat member library worldwide

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English (25)